2SB1181 Specs and Replacement
Type Designator: 2SB1181
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 typ MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SC63
2SB1181 Substitution
- BJT ⓘ Cross-Reference Search
2SB1181 datasheet
Power Transistor ( 80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181 BVCEO= 80V, IC = 1A 2.3+0.2 6.5 0.2 2) Good hFE linearty. C0.5 5.1+0.2 3) Low VCE(sat). 0.5 0.1 4.5+0.2 1.5 Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) 0.9 0... See More ⇒
2SB1260 / 2SB1181 Datasheet PNP -1.0A -80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO -80V Base Collector IC -1.0A Emitter Base Emitter 2SB1260 2SB1181 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/ ... See More ⇒
SMD Type Transistors PNP Transistors 2SB1181 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Hight breakdown voltage and high current. Low collector-emitter saturation voltage VCE(sat) Good hFE linearty. 0.127 Complementary to 2SD1733 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector ... See More ⇒
2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278 ... See More ⇒
Medium power transistor ( 32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1188 2SB1182 VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 -0.1 C0.5 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.2 1.5-0.1 -0.1 0.5 0.1 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) +0.1 Structure 0.4-... See More ⇒
Medium power transistor( 80V, 0.7A) 2SB1189 / 2SB1238 Features Dimensions (Unit mm) 1) High breakdown voltage, BVCEO= 80V, and 2SB1189 high current, IC= 0.7A. 4.0 2) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1) (2) Absolute maximum ratings (Ta=25 C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCE... See More ⇒
2SB1183 / 2SB1239 Transistors Power transistor (-40V, -2A) 2SB1183 / 2SB1239 External dimensions (Units mm) Features 1) Darlington connection for high DC current gain. 2SB1183 2) Built-in 4k resistor between base and emitter. 5.5 1.5 3) Complements the 2SD1759 / 2SD1861. 0.9 C0.5 Equivalent circuit 0.8Min. 1.5 C 2.5 9.5 B ROHM CPT3 (1) Base(Gate) RBE 4k (2) Co... See More ⇒
2SB1183 / 2SB1239 / 2SB786F Transistors Transistors 2SD1759 / 2SD1861 / 2SD947F (96-126-B23) (94S-321-D23) 283 ... See More ⇒
2sb1188 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf 
Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188 ... See More ⇒
2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf
2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277 ... See More ⇒
Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1184 2SB1243 VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2.5 0.2 6.8 0.2 2.3 +0.2 6.5 0.2 -0.1 C0.5 2) Complements the 2SD1760 / 2SD1864. 5.1 +0.2 -0.1 0.5 0.1 Structure 0.65Max. 0.65 0.1 0.75 Epitaxial planar type 0.9 PNP silicon transistor 0.55 0... See More ⇒
Transistors Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor (96-128-B57) 223 Transistors 2SB1184 / 2SB1243 / 2SB1185 FAbsolute maximum ratings (Ta = 25_C) FEle... See More ⇒
Medium power transistor ( 32V, 2A) 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1182 2SB1240 VCE(sat) = 0.5V (Typ.) 2.5 0.2 6.8 0.2 (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 C0.5 2) Complements 2SD1758 / 2SD1862. 5.1+0.2 -0.1 0.5 0.1 0.65Max. 0.65 0.1 Structure 0.75 0.9 0.5 0.1 Epitaxial planar type 0.55 0.1 PN... See More ⇒
Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit mm For medium-speed voltage switching 7.0 0.3 3.5 0.2 Complementary to 2SD1750, 2SD1750A 3.0 0.2 0 to 0.15 2.0 0.2 Features High forward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electron... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES SOT-89 *High current output up to 3A *Low saturation voltage ORDERING INFORMATION Pin Assignment Orderi... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD 2SB1182 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 TO-252 DESCRIPTION The UTC 2SB1182 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage ORDERING INFORMATION Ordering Number Pin Assignm... See More ⇒
2SB1188 -2A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 DESCRIPTION The 2SB1188 is designed for medium poweramplifier applications. 4 1 2 3 A FEATURES E C Low collector saturation voltage VCE(sat)=-0.5V(Typ.) RoHS Compliant Product B D F G CLASSIFICATION ... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1189 TRANSISTOR (PNP) 1. BASE FEATURES High breakdown voltage 2. COLLECTOR 1 Complements to 2SD1767 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -80 V Collector-Base Voltage VCEO Collector-Emitter Volta... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L 2SB1184 TRANSISTOR (PNP) FEATURES Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 1. BASE Complements the 2SD1760 / 2SD1864. 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector Base Voltage -... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 2SB1185 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Low Collector Saturation Voltage Complement to Type 2SD1762 3. EMITTER APPLICATIONS For Use in Low Frequency Power Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter V... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1188 TRANSISTOR (PNP) SOT-89-3L 1. BASE FEATURES Low VCE(sat). 2. COLLECTOR 1 Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -40 V Collector-Base Voltage VCEO -32 V Collector-Emitter Voltage V... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1187 DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1761 Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1186A DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763A High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER ... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1185 DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1762 APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1186 DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763 High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CO... See More ⇒
2SB1 1 8 9 TRANSISTOR(PNP) FEATURES High breakdown voltage Complements to 2SD1767 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -80 V Collector-Base Voltage VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.7 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ... See More ⇒
2SB1 1 8 8 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES 1 Low VCE(sat). 2. COLLECTOR Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -32 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage Collector Current -Continuous IC -2 A Collector Power Dissip... See More ⇒
2SB1188 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 3. EMITTER 1.4 1.4 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low VCE(sat). 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Complements the 2SD1766 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCB... See More ⇒
2SB1184(PNP) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Ba... See More ⇒
2SB1189 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 1.8 2 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN High breakdown voltage 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Complements to 2SD1767 0.37 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value... See More ⇒
2SB1182(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipat... See More ⇒
2SB1184 PNP PLASTIC ENCAPSULATE TRANSISTORS P b P b Lead(Pb)-Free Features 1.BASE 1.BASE 2.COLLECTOR 2.COLLECTOR * Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) ). 3.EMITTER 3.EMITTER TO-251 MAXIMUM RATINGS (TA=25 C unless otherwise noted) TO-251 Symbol Value Parameter Unit Collector-Base Voltage V -60 V CBO V -50 V Collector-Emitter Voltage CEO V Emitte... See More ⇒
2SB1188K PNP Silicon Medium Power Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise specified) Unit Parameter Symbol Ratings Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -2 A Collector Power Dissipation PD... See More ⇒
2SB1188 Epitaxial Planar PNP Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER % C ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Rating Symbol Limits Unit Collector-Base Voltage Vdc VCBO -40 Collector-Emitter Voltage Vdc VCEO -32 Emitter-Base Voltage Vdc VEBO -5 IC A(DC) -2 Collector Current ICP -3 A (Pulse)* PC W Collector Power Dissipation 0.5 % T , Tstg C Junctio... See More ⇒
2SB1182 PNP PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage -40 VCEO V Collector-Emitter Voltage -32 VEBO V Emitter-Base Voltage -5.0 Collector Current IC A -2.0 Collector Power Dissipation PD 1.5 W Junction Temperature Tj +150 ... See More ⇒
2SB1188 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A) SOT-89 Complements the 2SD1766 Weight 0.05 g RoHS product for packing code suffix "G" 1. BASE Halogen free product for packing code suffix "H" MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2. COLLECTOR Symbol Parameter Value U... See More ⇒
2SB1185 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F PNP Silicon PNP transistor in a TO-220F Plastic Package. / Features V 2SD1762 CE(sat) Low VCE(sat),complementary pair with 2SD1762. / Applications Power amplifier applications. / Equivalent Circu... See More ⇒
2SB1182 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features , 2SD1758 Low VCE(sat),complements the 2SD1758. / Applications Medium power amplifier applications. / Equivalent Circuit ... See More ⇒
ST 2SB1188U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 3 1) A 0.5 PC W Collector Power Dissipation 2 2) Junction Temper... See More ⇒
SMD Type Transistors PNP Transistors 2SB1189 1.70 0.1 Features High breakdown voltage, BVCEO=-80V, and High Current, IC=-0.7A Complementary to 2SD1767 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage ... See More ⇒
SMD Type Transistors Power transistor 2SB1184 TO-252 Unit mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Low VCE(sat). PNP silicon transistor. Epitaxial planar type 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V ... See More ⇒
SMD Type Transistors PNP Transistors 2SB1184 TO-252 Unit mm +0.15 6.50-0.15 Features +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low VCE(sat).VCE(sat) = -0.5V Complementary to 2SD1760 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector ... See More ⇒
SMD Type Transistors Medium Power Transistor 2SB1182 TO-252 Unit mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Low VCE(sat). Epitaxial planar type PNP silicon transistor 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO ... See More ⇒
SMD Type Transistors SMD Type PNP Transistor 2SB1188 1.70 0.1 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO -5 V IC -2 A Collector current ICP * -3... See More ⇒
SMD Type Transistors PNP Transistors 2SB1182 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Low VCE(sat).VCE(sat) = -0.5V Complementary to 2SD1758 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector... See More ⇒
CHENMKO ENTERPRISE CO.,LTD 2SB1182GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (DPAK) DPAK * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. .094 (2.38) CONSTRUCTION .086 (2.19) .022 (0.55) * PNP Switching Transistor .018 (0.45) (1) (3... See More ⇒
CHENMKO ENTERPRISE CO.,LTD 2SB1188GP SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(typ.)(IC/IB=-2A/-0.2A) CONSTRUCTION 4.6MAX. 1.6MAX. 1.7MAX. 0.4+0.05 * PNP Switching Transistor MARKING * HFE(P) NO +... See More ⇒
2SB1184(3CA1184) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications , 2SD1760(3DA1760) Features Low V complements the 2SD1760(3DA1760). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -50 V CEO ... See More ⇒
2SB1185(3CA1185) PNP /SILICON PNP TRANSISTOR /Purpose Power amplifier applications. V 2SD1762(3DA1762) CE(sat) Features Low V ,complementary pair with 2SD1762(3DA1762). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -50 V CEO ... See More ⇒
2sb1188-p 2sb1188-q 2sb1188-r.pdf
2SB1188 SMD Ty p e PNP Transistors Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 3 2 1 1.Base 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO -5 V IC -2 A Collector current ICP * -3 A Coll... See More ⇒
2sb1188sq-p 2sb1188sq-q 2sb1188sq-r.pdf
2SB1188SQ PNP Transistor SOT-89 Features Low collector saturation voltage Excellent h characteristics FE 1. Base 2. Collector 3.Emitter Marking 1188-P 1188-Q 1188-R Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 2 A Colle... See More ⇒
2SB1188 PNP-Silicon General use Transistors 1W 1.5A 25V Applications Can be used for switching and amplifying in various 4 electrical and electronic circuit. 3 2 1 2 1 3 Maximum ratings SOT-89 Parameters Symbol Rating Unit 1 Base 2 Collector 3 Emitter V VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-b... See More ⇒
isc Silicon PNP Power Transistor 2SB1187 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1761 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1184 DESCRIPTION Low V CE(sat) Small and slim package Complements the 2SD1760/2SD1864 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CB... See More ⇒
isc Silicon PNP Power Transistor 2SB1186A DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SD1763A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
isc Silicon PNP Power Transistor 2SB1185 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min.) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = -1.0V(Max.)@ I = -2A CE(sat) C Complement to Type 2SD1762 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SD1763 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIM... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1182 DESCRIPTION Small and slim package 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -32 V CEO V Emitter-... See More ⇒
Detailed specifications: 2SB1174, 2SB1175, 2SB1176, 2SB1177, 2SB1178, 2SB1179, 2SB118, 2SB1180, BDT88, 2SB1182, 2SB1183, 2SB1184, 2SB1185, 2SB1186, 2SB1186A, 2SB1187, 2SB1188P
Keywords - 2SB1181 pdf specs
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