2SB1190 Datasheet and Replacement

JMnic Product Specification Silicon PNP Power Transistors 2SB1190 DESCRIPTION With TO-220 package High VCEO Large PC Complement to type 2SD1772 APPLICATIONS Power amplifier TV vertical deflection output PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings

isc Silicon PNP Power Transistor 2SB1190DESCRIPTIONHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOComplement to Type 2SD1770Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

2SB1197KDatasheetLow Frequency Transistor (-32V, -0.8A)lOutlinel SOT-346 Parameter Value SC-59 VCEO-32VIC-800mASMT3lFeatures lInner circuitl l1) Low VCE(sat). VCE(sat)-500mV( IC= -500mA / IB= -50mA)2) IC= -0.8A.3) Complements the 2SD1781K.lApplicationlLOW FREQUENCY POWER AMPLIFIERlPackaging specif

TransistorsLow-frequency Transistor (*80V, *0.5A)2SB1198KFFeatures FExternal dimensions (Unit:s mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC / IB = *0.5A / *50mA)2) High breakdown voltage.BVCEO = *80V3) Complements the 2SD1782K.FStructureEpitaxial planar typePNP silicon transistorSOT-89FAbsolute maximum ratings (Ta = 25_C)FElectrical characteristics (Ta = 25_C)

TransistorsAEC-Q101 QualifiedLow-frequency Transistor (*80V, *0.5A)2SB1198KFRA2SB1198KFFeatures FExternal dimensions (Unit:s mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC / IB = *0.5A / *50mA)2) High breakdown voltage.BVCEO = *80V2SD1782KFRA3) Complements the 2SD1782K.FStructureEpitaxial planar typePNP silicon transistorFAbsolute maximum ratings (Ta = 25_C)FE

MCC2SB1197-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SB1197-QCA 91311Phone: (818) 701-49332SB1197-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information)Epitaxial Transistors Small Package Mounting:any position Epoxy me

Power Transistors2SB1193Silicon PNP epitaxial planar type darlingtonUnit: mmFor midium-speed power switching 10.00.2 4.20.25.50.2 2.70.2Complementary to 2SD1773 3.10.1 Features High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw1.30.21.40.10.5+0.20.1

UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicontransistor. FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE(sat) : VCE(sat)= -0.2V (Typ) (IC/IB = -0.5A/-50mA) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing

2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Low VCE(sat).VCE(sat)-0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L3 Complements of the 2SD1781 3Top ViewC B11 2CLASSIFICATION OF hFE 2K EProduct-Rank 2SB1197-P 2SB1197-Q 2SB1197-R

2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SC-59 Low VCE(sat).VCE(sat)-0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L3 3Top ViewC BMECHANICAL DATA 1 Case: SC-59, 1 22K E Weight: 0.008 grams(approx.) DCLASSIFICATION OF hFE H J

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-232SB1198 TRANSISTOR (PNP)FEATURES 1. BASE Low VCE(sat)2. EMITTER High breakdown voltage3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 TRANSISTOR (PNP)SOT-23 FEATURES Unit : mm 1. BASE Low VCE(sat).VCE(sat)

JMnic Product Specification Silicon PNP Power Transistors 2SB1193 DESCRIPTION With TO-220Fa package High DC current gain High speed switching DARLINGTON Complement to type 2SD1773 APPLICATIONS For medium speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 EmitterAbsolute maximum rating

JMnic Product Specification Silicon PNP Power Transistors 2SB1192 DESCRIPTION With TO-220Fa package High VCEO Large PC Complement to type 2SD1770 APPLICATIONS Power amplifier TV vertical deflection output PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base vol

JMnic Product Specification Silicon PNP Power Transistors 2SB1194 DESCRIPTION With TO-220Fa package High DC current gain High speed switching DARLINGTON Complement to type 2SD1633 APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 EmitterAbsolute maximum ratings(Ta=25

2SB1 1 97 TRANSISTOR(PNP)SOT-23 1. BASE Unit : mm FEATURES 2. EMITTER 3. COLLECTOR Low VCE(sat).VCE(sat)

2SB1197 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low VCE(sat).VCE(sat)

2SB1198K SOT-23-3L Transistor(PNP)1. BASE SOT-23-3L2. EMITTER 2.923. COLLECTOR 0.351.17Features2.80 1.60 Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K 0.151.90Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collect

2SB1197K SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2. EMITTER 2.920.353. COLLECTOR 1.17Features2.80 1.60 Power amplifier 0.151.90MAXIMUM RATINGS* TA=25 unless otherwise noted Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage -40 VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collec

2SB1197PNP General Purpose Transistors3Pb Lead(Pb)-Free12Features:SOT-23* High current capacity in compact package.* Epitaxial planar type.* We declare that the material of product compliance with RoHS requirements.MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitVCBOCollector-Base Voltage -40 VCollector-Emitter VoltageVCEO-32 VVEBOEmitter-Base Voltage -5.0

FM120-M WILLAS2SB1197KxLT1THRULow Frequency TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toPNP Silicon

LESHAN RADIO COMPANY, LTD.Low Frequency TransistorL2SB1197KQLT1G SeriesS-L2SB1197KQLT1G SeriesPNP SiliconFEATURE High current capacity in compact package.3IC = -0.8A. Epitaxial planar type. NPN complement: L2SD1781K1 We declare that the material of product compliance with RoHS requirements.2 S- Prefix for Automotive and Other Applications Requiring Unique Site

LESHAN RADIO COMPANY, LTD.Low Frequency TransistorL2SB1197KQLT1G SeriesS-L2SB1197KQLT1G SeriesPNP SiliconFEATURE High current capacity in compact package.3IC = -0.8A. Epitaxial planar type.1 NPN complement: L2SD1781K We declare that the material of product compliance with RoHS requirements.2 S- Prefix for Automotive and Other Applications Requiring Unique Site

SMD Type TransistorsSMD TypePNP Transistors2SB1197 (2SB1197K)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesLow VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA .IC = -0.8A.12PNP silicon transistor+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base Voltage VCB

SMD Type TransistorsPNP Transistors2SB1198KSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-80V 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SD1782K+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

CHENMKO ENTERPRISE CO.,LTD2SB1197KGPSURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 AmpereAPPLICATION* Telephone and proferssional communction equipment.* Other switching applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* Corrector peak current (Max.=1000mA). * Suitable for high packing density.* Low voltage (Max.=40V) .* High satu

2SB1197KPlastic-Encapsulate TransistorsSOT-23 (PNP) FEATURES Very low VCE(sat). VCE(sat)

RoHS RoHSCOMPLIANT COMPLIANT2SB1197 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: 2SB1197-P AHP 2SB1197-Q AHQ 2SB1197-R AHR Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value

isc Silicon PNP Darlington Power Transistor 2SB1193DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -4A)FE CE CComplement to Type 2SD1773Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for midium -speed power switching applications.

isc Silicon PNP Power Transistor 2SB1192DESCRIPTIONHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOComplement to Type 2SD1772Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Darlington Power Transistor 2SB1194DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)High DC Current Gain-: h = 1500(Min)@ (V = -3V, I = -3A)FE CE CComplement to Type 2SD1633Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIM