2SB1202U Datasheet and Replacement
Type Designator: 2SB1202U
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 39 pF
Forward Current Transfer Ratio (hFE), MIN: 280
Noise Figure, dB: -
Package: TO218
2SB1202U Substitution
2SB1202U Datasheet (PDF)
2sb1202 2sd1802.pdf

Ordering number:ENN2113BPNP/NPN Epitaxial Planar Silicon Transistors2SB1202/2SD1802High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1202/2SD1802]6.5Features2.35.00.54 Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low col
2sb1202 2sd1802.pdf

2SB1202/2SD1802Bipolar Transistor()50 V, ()3 A, Low VCE(sat) (PNP)NPNSingle TP/TP-FAFeatures www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed1 Small and Slim Package Making it Easy to Make2SB1202/2SD1802-used Sets Smaller3 These Devices
2sb1202.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SB1202 PNP PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SB1202 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERI
Datasheet: 2SB1201R , 2SB1201S , 2SB1201T , 2SB1201U , 2SB1202 , 2SB1202R , 2SB1202S , 2SB1202T , BC327 , 2SB1203 , 2SB1203Q , 2SB1203R , 2SB1203S , 2SB1203T , 2SB1204 , 2SB1204Q , 2SB1204R .
History: BC461-4
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History: BC461-4



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