2SB1215S Datasheet and Replacement
Type Designator: 2SB1215S
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: TO218
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2SB1215S Datasheet (PDF)
2sb1215 2sd1815.pdf

Ordering number:ENN2539BPNP/NPN Epitaxial Planar Silicon Transistors2SB1215/2SD1815High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1215/2SD1815]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. Exclle
2sb1215 2sd1815.pdf

Ordering number : EN2539C2SB1215/2SD1815Bipolar Transistorhttp://onsemi.com() () ( ) ( )100V, 3A, Low VCE sat PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permittin
2sb1215.pdf

SMD Type TransistorsPNP Transistors2SB1215TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT Fast switching time. 0.127+0.10.80-0.1max Complementary to 2SD1815+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolut
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MM3725 | DMC364A6 | AC166 | LMBT5401DW1T1G | 2SC5489 | KSD5741 | LMUN5231DW1T1G
Keywords - 2SB1215S transistor datasheet
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History: MM3725 | DMC364A6 | AC166 | LMBT5401DW1T1G | 2SC5489 | KSD5741 | LMUN5231DW1T1G



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