2SB1215T Specs and Replacement
Type Designator: 2SB1215T
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO218
2SB1215T Substitution
- BJT ⓘ Cross-Reference Search
2SB1215T datasheet
Ordering number ENN2539B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1215/2SD1815 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1215/2SD1815] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. Exclle... See More ⇒
Ordering number EN2539C 2SB1215/2SD1815 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 100V, 3A, Low VCE sat PNP NPN Single TP/TP-FA Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permittin... See More ⇒
SMD Type Transistors PNP Transistors 2SB1215 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT Fast switching time. 0.127 +0.1 0.80-0.1 max Complementary to 2SD1815 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolut... See More ⇒
Detailed specifications: 2SB1211, 2SB1212, 2SB1213, 2SB1214, 2SB1215, 2SB1215Q, 2SB1215R, 2SB1215S, 2SC2655, 2SB1216, 2SB1216Q, 2SB1216R, 2SB1216S, 2SB1216T, 2SB1217, 2SB1218, 2SB1218A
Keywords - 2SB1215T pdf specs
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History: 2N1750 | 2N6923 | BC414B | 2N1780 | BC850BLT1G | 2N6922A | 2N5251
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