2SB1234 Datasheet, Equivalent, Cross Reference Search

SMD Type TransistorsPNP Transistors2SB1234SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-50V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SD18511.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Power Transistor (160V, 1.5A) 2SB1275 / 2SB1236A Features Dimensions (Unit : mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SB12755.5 1.5 (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 0.94) Complements the 2SD1918 / 2SD1857A. C0.50.8Min.1.52.59.5(1) Base(Gate)Absolute maximum ratings (Ta =

Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1132 2SA1515SVCE(sat) = 0.2V(Typ.) + +4 0.2 2 0.2- -4.5 +0.2 -0.1(IC / IB = 500mA / 50mA) 1.5 +0.2+1.6 0.1 -0.1-2) Compliments 2SD1664 / 2SD1858 (1) (2) (3) 0.45 +0.15 -0.050.4 +0.1Structure -0.05++ 0.5 0.10.

Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features Dimensions (Unit : mm) 1) High breakdown voltage, BVCEO=80V, and 2SB1189high current, IC=0.7A. 4.02) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1)(2)Absolute maximum ratings (Ta=25C) (3)Parameter Symbol Limits UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCE

2SB1183 / 2SB1239TransistorsPower transistor (-40V, -2A)2SB1183 / 2SB1239 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.2SB11832) Built-in 4k resistor between base and emitter.5.5 1.53) Complements the 2SD1759 / 2SD1861.0.9C0.5 Equivalent circuit0.8Min.1.5C2.59.5BROHM : CPT3 (1) Base(Gate)RBE 4k(2) Co

Medium Power Transistor (32V,1A) 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SA1515S 2SB1237+2.5 0.2VCE(sat) = 0.2V(Typ.) + + +-4 0.2 2 0.2 6.8 0.2- - -(IC / IB = 500mA / 50mA) 2) Compliments 2SD1858 Structure 0.45 +0.15 0.65Max. -0.05Epitaxial planar type +PNP silicon transistor 0.5 0.1-0.45 +0.152.5

2SB1236TransistorsPower Transistor (-120V, -1.5A)2SB1236 Features External dimensions (Units : mm)1) High breakdown voltage. (BVCEO = -120V)2) Low collector output capacitance.2.56.8 (Typ. 30pF at VCB = -10V)3) High transition frequency. (fT = 50MHz)0.65Max.4) Complements the 2SD1857.0.5(1) (2) (3)2.54 2.541.05 0.45Taping specifications Absolute maximum ratin

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SB1189 / 2SB1238TransistorsMedium power transistor (-80V, -0.7A)2SB1189 / 2SB1238 External dimensions (Units : mm) Features1) High breakdown voltage, BVCEO=-80V, and2SB11894.0high current, IC=-0.7A.1.0 2.5 0.52) Complements the 2SD1767 / 2SD1859.(1)(2)(3) Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO -80 VCollecto

JMnic Product Specification Silicon PNP Power Transistors 2SB1230 DESCRIPTION With TO-3PN package Wide area of safe operation Complement to type 2SD1840 Low collector saturation voltage APPLICATIONS Motor drivers,relay drivers,converters and other general high-current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounti

2SB1237(3CA1237) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. , 2SD1858(3DA1858) Features: Low saturation voltage, complements the 2SD1858(3DA1858). /Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO -40 V

isc Silicon PNP Power Transistor 2SB1231DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1841Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, converters and other generalHigh-current switching app

isc Silicon PNP Power Transistor 2SB1230DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1840Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, converters and other generalHigh-current switching app

isc Silicon PNP Power Transistor 2SB1236DESCRIPTIONHigh breakdown voltage. (BV = -120V)CEOLow collector output capacitance.High transition frequency. (fT = 50MHz)Complement to Type 2SD1857Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio amplifier,voltage regulator, and general purpose power amplifie