2SB1249 Specs and Replacement
Type Designator: 2SB1249
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 130 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO218
2SB1249 Substitution
- BJT ⓘ Cross-Reference Search
2SB1249 datasheet
Power Transistor ( 80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181 BVCEO= 80V, IC = 1A 2.3+0.2 6.5 0.2 2) Good hFE linearty. C0.5 5.1+0.2 3) Low VCE(sat). 0.5 0.1 4.5+0.2 1.5 Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) 0.9 0... See More ⇒
Medium power transistor ( 32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1188 2SB1182 VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 -0.1 C0.5 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.2 1.5-0.1 -0.1 0.5 0.1 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) +0.1 Structure 0.4-... See More ⇒
2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 / 2SB1241 Features External dimensions (Units mm) 1) High breakdown voltage and high 2SB1260 2SB1181 current. 2.3+0.2 6.5 0.2 -0.1 C0.5 BVCEO= -80V, IC=-1A 5.1+0.2 -0.1 0.5 0.1 4.5+0.2 -0.1 2) Good hFE linearity. 1.5+0.2 1.6 0.1 -0.1 3) Low VCE(sat). 4) Complements the 2SD1898 / 0.... See More ⇒
Detailed specifications: 2SB1241, 2SB1242, 2SB1243, 2SB1244, 2SB1245, 2SB1246, 2SB1247, 2SB1248, BC548, 2SB125, 2SB1250, 2SB1251, 2SB1252, 2SB1253, 2SB1254, 2SB1255, 2SB1256
Keywords - 2SB1249 pdf specs
2SB1249 cross reference
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History: 2N6733 | LMBT3906WT1G | ZTX968 | 2SC1000 | BSR14R | 2SB1160 | 2SB1116
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