2SB1259 Specs and Replacement
Type Designator: 2SB1259
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
2SB1259 datasheet
..1. Size:30K sanken-ele
2sb1259.pdf 
E (3k )(100 ) B Darlington 2SB1259 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) Application Driver for Solenoid, Relay and Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.2 0.2 10.1 c0.... See More ⇒
..2. Size:223K inchange semiconductor
2sb1259.pdf
isc Silicon PNP Darlington Power Transistor 2SB1259 DESCRIPTION High DC Current Gain- h = 2000(Min)@I = -5A FE C Low-Collector Saturation Voltage- V = -1.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD2081 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applicati... See More ⇒
8.1. Size:75K panasonic
2sb1252.pdf
Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm 10.0 0.2 4.2 0.2 Complementary to 2SD1892 5.5 0.2 2.7 0.2 Features 3.1 0.1 Optimum for 35W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat) ... See More ⇒
8.2. Size:74K panasonic
2sb1253.pdf
Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm Complementary to 2SD1893 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 40W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat) ... See More ⇒
8.3. Size:74K panasonic
2sb1255.pdf
Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm Complementary to 2SD1895 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 90W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat) ... See More ⇒
8.4. Size:74K panasonic
2sb1254.pdf
Power Transistors 2SB1254 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm Complementary to 2SD1894 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 60W HiFi output 3.2 0.1 High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) ... See More ⇒
8.5. Size:147K jmnic
2sb1258.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1258 DESCRIPTION With TO-220F package Complement to type 2SD1785 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25... See More ⇒
8.6. Size:162K jmnic
2sb1255.pdf
JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION With TO-3PFa package Optimum for 90W Hi-Fi output High foward current transfer ratio hFE Low collector-emitter saturation voltage Complement to type 2SD1895 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(T... See More ⇒
8.7. Size:154K jmnic
2sb1254.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1254 DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SD1894 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARA... See More ⇒
8.8. Size:147K jmnic
2sb1257.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION With TO-220F package Complement to type 2SD2014 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25... See More ⇒
8.9. Size:29K sanken-ele
2sb1258.pdf
E (3k )(100 ) B Darlington 2SB1258 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) Application Driver for Solenoid, Relay and Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 4.2 0.2 10.1 c... See More ⇒
8.10. Size:30K sanken-ele
2sb1257.pdf
E (2k )(650 ) B Darlington 2SB1257 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) Application Driver for Solenoid, Relay and Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings 0.2 Unit Unit 5.5 0.2 15.6 0... See More ⇒
8.11. Size:208K inchange semiconductor
2sb1258.pdf
isc Silicon PNP Darlington Power Transistor 2SB1258 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@I = -3A FE C Complement to Type 2SD1785 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid, relay and motor and general purpose applications. AB... See More ⇒
8.12. Size:191K inchange semiconductor
2sb1253.pdf
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1253 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -5A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD1893 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ... See More ⇒
8.13. Size:217K inchange semiconductor
2sb1255.pdf
isc Silicon PNP Darlington Power Transistor 2SB1255 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -6A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD1895 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS... See More ⇒
8.14. Size:223K inchange semiconductor
2sb1254.pdf
isc Silicon PNP Darlington Power Transistor 2SB1254 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -6A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -6A CE(sat) C Complement to Type 2SD1894 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS... See More ⇒
8.15. Size:114K inchange semiconductor
2sb1257.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION With TO-220F package Complement to type 2SD2014 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maxim... See More ⇒
Detailed specifications: 2SB1251
, 2SB1252
, 2SB1253
, 2SB1254
, 2SB1255
, 2SB1256
, 2SB1257
, 2SB1258
, D882
, 2SB126
, 2SB1260
, 2SB1261
, 2SB1262
, 2SB1263
, 2SB1264
, 2SB1265
, 2SB1266
.
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