All Transistors. 2SB1274Q Datasheet

 

2SB1274Q Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1274Q
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220

 2SB1274Q Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1274Q Datasheet (PDF)

 7.1. Size:34K  sanyo
2sb1274 2sd1913.pdf

2SB1274Q
2SB1274Q

Ordering number : ENN2246B2SB1274/2SD1913PNP/NPN Epitaxial Planar Silicon Transistors2SB1274/2SD191360V/3A Low-FrequencyPower Amplifier ApplicationsApplicationsPackage Dimensions General power amplifier.unit : mm2041A[2SB1274/2SD1913]4.510.02.8Features3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High br

 7.2. Size:361K  jiangsu
2sb1274.pdf

2SB1274Q
2SB1274Q

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors2SB1274 TRANSISTOR (PNP)TO-220-3LFEATURES 1. BASE Wide ASO (Adoption of MBIT Process).2. COLLECTOR Low Saturation Voltage.3. EMITTER High Reliability. High Breakdown Voltage. Equivalent Circuit B1274=Device code Solid dot=Green moldinn compound device, if none,th

 7.3. Size:302K  lge
2sb1274.pdf

2SB1274Q
2SB1274Q

2SB1274(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage -60 V VCEO Collector-E

 7.4. Size:241K  lzg
2sb1274 3ca1274.pdf

2SB1274Q
2SB1274Q

2SB1274(3CA1274) PNP /SILICON PNP TRANSISTOR Purpose: Low frequency power amplifier applications. Features: High V ,low saturation voltage, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO

 7.5. Size:154K  inchange semiconductor
2sb1274.pdf

2SB1274Q
2SB1274Q

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1274 DESCRIPTION With TO-220F package Complement to type 2SD1913 High reliability. High breakdown voltage Low saturation voltage. Wide area of safe operation APPLICATIONS 60V/3A low-frequency power amplifier General power amplifier applications PINNING PIN DESCRIPTION1 Emitt

Datasheet: 2SB1272Q , 2SB1272R , 2SB1272S , 2SB1273 , 2SB1273Q , 2SB1273R , 2SB1273S , 2SB1274 , 2SC945 , 2SB1274R , 2SB1274S , 2SB1275 , 2SB1276 , 2SB1277 , 2SB1278 , 2SB1279 , 2SB127A .

 

 
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