2SB1280 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1280
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 5000
Noise Figure, dB: -
Package: TO126
2SB1280 Transistor Equivalent Substitute - Cross-Reference Search
2SB1280 Datasheet (PDF)
2sb1288.pdf
Transistor2SB1288Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.7 0.1Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45 0.1Parameter Sy
2sb1288 e.pdf
Transistor2SB1288Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.7 0.1Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45 0.1Parameter Sy
2sb1285.pdf
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1285 Case : MTO-3PUnit : mm(T15J10)-15A PNPRATINGS
2sb1283.pdf
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1283 Case : ITO-220Unit : mm(TP7J10)A PNPRATINGS
2sb1282.pdf
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1282 Case : ITO-220Unit : mm(TP4J10)4A PNPRATINGS
2sb1284.pdf
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1284 Case : ITO-220Unit : mm(TP10J10)A PNPRATINGS
2sb1283.pdf
isc Silicon PNP Darlingtion Power Transistor 2SB1283DESCRIPTIONHigh DC Current Gain-: h = 1500(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive
2sb1287.pdf
isc Silicon PNP Darlington Power Transistor 2SB1287DESCRIPTIONHigh DC Current Gain-:h = 1000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-:V = -100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage:V = -1.5V(Max)@ I = -1ACE(sat) CComplement to Type 2SD1765Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
2sb1284.pdf
isc Silicon PNP Darlingtion Power Transistor 2SB1284DESCRIPTIONHigh DC Current Gain-: h = 1500(Min.)@I = -5AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive
2sb1289.pdf
isc Silicon PNP Power Transistor 2SB1289DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1580Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
2sb1286.pdf
isc Silicon PNP Darlington Power Transistor 2SB1286DESCRIPTIONHigh DC Current Gain-:h = 1000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-:V = -100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage:V = -1.5V(Max)@ I = -1ACE(sat) CComplement to Type 2SD1646Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
