2SB1293 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1293
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO220
2SB1293 Transistor Equivalent Substitute - Cross-Reference Search
2SB1293 Datasheet (PDF)
2sb1293.pdf
isc Silicon PNP Power Transistor 2SB1293DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1896Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
2sb1294.pdf
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2sb1297 e.pdf
Transistor2SB1297Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD19375.0 0.2 4.0 0.2FeaturesExtremely satisfactory linearity of the forward current transferratio hFE.High transition frequency fT.Makes up a complementary pair with 2SD1937, which is opti-0.7 0.1mum for the pre-driver stage of a 40 to 60W output amp
2sb1297.pdf
Transistor2SB1297Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD19375.0 0.2 4.0 0.2FeaturesExtremely satisfactory linearity of the forward current transferratio hFE.High transition frequency fT.Makes up a complementary pair with 2SD1937, which is opti-0.7 0.1mum for the pre-driver stage of a 40 to 60W output amp
2sb1299.pdf
Power Transistors2SB1299Silicon PNP epitaxial planar typeFor power amplificationUnit: mmComplementary to 2SD127310.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh foward current transfer ratio hFE 3.1 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute
2sb1295.pdf
SMD Type TransistorsPNP Transistors2SB1295SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Large current capacity. Low collector to emitter saturation voltage.1 2 Complimentary to 2SD1935.+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B
2sb1292.pdf
isc Silicon PNP Power Transistor 2SB1292DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1832Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
2sb1290.pdf
isc Silicon PNP Power Transistor 2SB1290DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1833Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
2sb1294.pdf
isc Silicon PNP Power Transistor 2SB1294DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1897Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
2sb1291.pdf
isc Silicon PNP Power Transistor 2SB1291DESCRIPTIONHigh Collector Current: I = -5ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1720Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP122 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
