2SB1296S Specs and Replacement
Type Designator: 2SB1296S
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: TO126
- BJT ⓘ Cross-Reference Search
2SB1296S datasheet
8.2. Size:39K rohm
2sb1292.pdf 
2SB1292 Transistors Transistors 2SB1832 (94L-316-B75) (94L-872-D75) 286 ... See More ⇒
8.3. Size:38K rohm
2sb1290.pdf
2SB1290 Transistors Transistors 2SD1833 (96-630-B55) (96-741-D55) 285 ... See More ⇒
8.5. Size:154K rohm
2sb1294.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.7. Size:41K panasonic
2sb1297 e.pdf
Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD1937 5.0 0.2 4.0 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is opti- 0.7 0.1 mum for the pre-driver stage of a 40 to 60W output amp... See More ⇒
8.8. Size:37K panasonic
2sb1297.pdf
Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD1937 5.0 0.2 4.0 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is opti- 0.7 0.1 mum for the pre-driver stage of a 40 to 60W output amp... See More ⇒
8.9. Size:53K panasonic
2sb1299.pdf
Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification Unit mm Complementary to 2SD1273 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High foward current transfer ratio hFE 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute... See More ⇒
8.10. Size:1395K kexin
2sb1295.pdf
SMD Type Transistors PNP Transistors 2SB1295 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Large current capacity. Low collector to emitter saturation voltage. 1 2 Complimentary to 2SD1935. +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B... See More ⇒
8.11. Size:217K inchange semiconductor
2sb1293.pdf
isc Silicon PNP Power Transistor 2SB1293 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1896 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE... See More ⇒
8.12. Size:217K inchange semiconductor
2sb1292.pdf
isc Silicon PNP Power Transistor 2SB1292 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1832 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE... See More ⇒
8.13. Size:219K inchange semiconductor
2sb1290.pdf
isc Silicon PNP Power Transistor 2SB1290 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1833 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE... See More ⇒
8.14. Size:218K inchange semiconductor
2sb1294.pdf
isc Silicon PNP Power Transistor 2SB1294 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1897 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE... See More ⇒
8.15. Size:216K inchange semiconductor
2sb1291.pdf
isc Silicon PNP Power Transistor 2SB1291 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1720 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE ... See More ⇒
Detailed specifications: 2SB1292, 2SB1293, 2SB1294, 2SB1295, 2SB1295-5, 2SB1295-6, 2SB1295-7, 2SB1296, BD333, 2SB1296T, 2SB1296U, 2SB1297, 2SB1298, 2SB1299, 2SB129A, 2SB13, 2SB130
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