2SB1302 Datasheet and Replacement

Ordering number : EN2555B2SB1302SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SB1302High-Current Switching ApplicationsApplications DC-DC converters, motor drivers, relay drivers, lamp drivers.Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed.

Ordering number : EN2555C2SB1302Bipolar Transisitorhttp://onsemi.com ( )20V, 5A, Low VCE sat PNP Single PCPApplicaitons DC-DC converters, motor drivers, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity Fast switching speed Ultrasmall size making it easy to

SMD Type TransistorsPNP Transistors2SB13021.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity.0.42 0.1 Fast switching speed. 0.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base V

Ordering number : EN2555C2SB1302Bipolar Transisitorhttp://onsemi.com ( )20V, 5A, Low VCE sat PNP Single PCPApplicaitons DC-DC converters, motor drivers, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity Fast switching speed Ultrasmall size making it easy to

2SB1308TransistorsTransistors2SD1963(94S-166-B204)(94S-342-D204)290

2SB1308TransistorsTransistors2SD1963(94S-166-B204)(94S-342-D204)290Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference o

2SB1 308TRANSISTOR SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor Excellent DC current Gain 3. EMITTER Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A PC C

FM120-M WILLASTHRU2SB1308 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPa c kage outlineFeaturesTRANSISTOR (PNP) esign, excellent power dissipation offers Batch process dSOT-89 better reverse leakage current and thermal resistance.FEATURES SOD-123H Low p Powe

SMD Type TransistorsPower Transistor2SB1308FeaturesLow saturation voltage, typicallyVCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.Excellent DC current gain characteristics.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -3 ACollector

SMD Type TransistorsPower Transistor2SB1308FeaturesLow saturation voltage, typicallyVCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.Excellent DC current gain characteristics.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -3 ACollector

SMD Type TransistorsPNP Transistors2SB13081.70 0.1 Features Power Transistor Excellent DC current Gain Low Collector-emitter Saturation Voltage0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage

SMD Type TransistorsPower Transistor2SB1308FeaturesLow saturation voltage, typicallyVCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.Excellent DC current gain characteristics.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -3 ACollector