2SB1307M PDF and Equivalents Search

 

2SB1307M Specs and Replacement

Type Designator: 2SB1307M

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 82

Noise Figure, dB: -

Package: ATR

 2SB1307M Substitution

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2SB1307M datasheet

 8.1. Size:291K  sanyo

2sb1302.pdf pdf_icon

2SB1307M

Ordering number EN2555B 2SB1302 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SB1302 High-Current Switching Applications Applications DC-DC converters, motor drivers, relay drivers, lamp drivers. Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. ... See More ⇒

 8.2. Size:134K  nec

2sb1300.pdf pdf_icon

2SB1307M

... See More ⇒

 8.3. Size:37K  rohm

2sb1308.pdf pdf_icon

2SB1307M

2SB1308 Transistors Transistors 2SD1963 (94S-166-B204) (94S-342-D204) 290 ... See More ⇒

 8.4. Size:47K  rohm

2sb1308 2sd1963.pdf pdf_icon

2SB1307M

2SB1308 Transistors Transistors 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference o... See More ⇒

Detailed specifications: 2SB1302, 2SB1302R, 2SB1302S, 2SB1302T, 2SB1303, 2SB1304, 2SB1305, 2SB1306, 2SA1943, 2SB1308P, 2SB1308Q, 2SB1308R, 2SB1309, 2SB131, 2SB1310, 2SB1311, 2SB1312

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