2SB1310 Datasheet and Replacement

2SB1580 / 2SB1316 / 2SB1567TransistorsPower Transistor (-100V , -2A)2SB1580 / 2SB1316 / 2SB1567 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SB15804.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)4) Complements the 2SD2195 / 2SD1980 / 2SD2398.(2)(3)(1) Base(Gate)(2) Collector(Dr

2SB1316 Transistors Power Transistor (-100V , -2A) 2SB1316 External dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain. 2SB15804.02) Built-in resistor between base and emitter. 1.0 2.5 0.53) Built-in damper diode. (1)4) Complements the 2SD2195 / 2SD1980. (2)(3)(1) Base(2) Collector Absolute maximum ratings (Ta = 25C) ROHM

Transistor2SB1319Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Large collector current IC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05

Power Transistors2SB1317Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD1975 3.3 0.220.0 0.5 5.0 0.33.0FeaturesSatisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristicsWide area of safe operation (ASO) 1.5High transition frequency fTOptimum for the output stage of a HiFi audio am

Transistor2SB1319Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Large collector current IC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05

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isc Silicon PNP Power Transistor 2SB1316DESCRIPTIONDarlington connection for high DC current gainBuilt in resistor between base and emitterBuilt in damper diodeComplementary NPN types:2SD1980100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drivers,LED driver,Power supplyABSOLUTE MAXIMUM RA

isc Silicon PNP Power Transistor 2SB1317DESCRIPTIONGood Linearity of hFEWide Area of Safe OperationHigh DC Current-Gain Bandwidth ProductComplement to Type 2SD1975Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplificationOptimum for the output stage of a Hi-Fi audio amplifier.ABSOLUTE MAXIMUM RATING

isc Silicon PNP Power Transistor 2SB1315DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1977Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-55W audio frequency amplifieroutput stage applic