All Transistors. 2SB1339 Datasheet

 

2SB1339 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1339
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 10000
   Noise Figure, dB: -
   Package: TO220

 2SB1339 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1339 Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
2sb1339.pdf

2SB1339
2SB1339

isc Silicon PNP Darlington Power Transistor 2SB1339DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h =1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:57K  rohm
2sb1335 1-2.pdf

2SB1339
2SB1339

 8.2. Size:38K  rohm
2sb1335.pdf

2SB1339

2SB1335TransistorsTransistors2SD1855(94L-356-B14)(94L-878-D14)279

 8.3. Size:110K  rohm
2sb1334.pdf

2SB1339
2SB1339

 8.4. Size:89K  inchange semiconductor
2sb1334a.pdf

2SB1339
2SB1339

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1334A DESCRIPTION With TO-220 package Wide area of safe operation Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base Fig.1 simplified outline (TO-220)

 8.5. Size:218K  inchange semiconductor
2sb1335.pdf

2SB1339
2SB1339

isc Silicon PNP Power Transistor 2SB1335DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1855Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

 8.6. Size:217K  inchange semiconductor
2sb1334.pdf

2SB1339
2SB1339

isc Silicon PNP Power Transistor 2SB1334DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1778Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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