2SB135 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB135
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO1
2SB135 Transistor Equivalent Substitute - Cross-Reference Search
2SB135 Datasheet (PDF)
2sb1357.pdf
Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep
2sb1353.pdf
Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep
2sb1352.pdf
E(2k)(100)BDarlington 2SB1352Equivalent circuitCSilicon PNP Epitaxial Planar TransistorApplication : Driver for Printer Head, Solenoid, Relay, Motor and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SB1352 Unit Symbol Conditions 2SB1352 Unit0.20.2 5.515.60.23.45VCBO
2sb1351.pdf
E(2k)(100)BDarlington 2SB1351Equivalent circuitCSilicon PNP Epitaxial Planar TransistorApplication : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Ratings Unit Symbol Condition RatingsUnit0.24.20.210.1c0.52.8VCBO 60
2sb1353.pdf
isc Silicon PNP Power Transistor 2SB1353DESCRIPTIONGood Linearity of hFE Collector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD2033Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high voltage driver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
