All Transistors. 2SB1360 Datasheet

 

2SB1360 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1360
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO126

 2SB1360 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1360 Datasheet (PDF)

 8.1. Size:104K  mcc
2sb1366f-o.pdf

2SB1360
2SB1360

MCCTMMicro Commercial Components2SB1366F-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB1366F-YPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Low VCE(SAT):VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A)Power Transistors Lead Free Finish/RoHS Compliant (No

 8.2. Size:104K  mcc
2sb1366f-y.pdf

2SB1360
2SB1360

MCCTMMicro Commercial Components2SB1366F-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB1366F-YPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisure Sensitivity Level 1 Low VCE(SAT):VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A)Power Transistors Lead Free Finish/RoHS Compliant (No

 8.3. Size:51K  panasonic
2sb1361.pdf

2SB1360
2SB1360

Power Transistors2SB1361Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD205215.0 0.3 5.0 0.2Features11.0 0.2 3.2Satisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed t

 8.5. Size:213K  inchange semiconductor
2sb1367.pdf

2SB1360
2SB1360

isc Silicon PNP Power Transistor 2SB1367DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -2.0V(Max)@ (I = -4A, I = -0.4A)CE(sat) C BComplement to Type 2SD2059Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

 8.6. Size:222K  inchange semiconductor
2sb1361.pdf

2SB1360
2SB1360

isc Silicon PNP Power Transistor 2SB1361DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2052Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 8.7. Size:213K  inchange semiconductor
2sb1369.pdf

2SB1360
2SB1360

isc Silicon PNP Power Transistor 2SB1369DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -0.5A, I = -50mA)CE(sat) C BComplement to Type 2SD2061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage applications.TV, monitor vertical

 8.8. Size:220K  inchange semiconductor
2sb1362.pdf

2SB1360
2SB1360

isc Silicon PNP Power Transistor 2SB1362DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2053Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 8.9. Size:213K  inchange semiconductor
2sb1366.pdf

2SB1360
2SB1360

isc Silicon PNP Power Transistor 2SB1366DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type 2SD2058Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

 8.10. Size:213K  inchange semiconductor
2sb1368.pdf

2SB1360
2SB1360

isc Silicon PNP Power Transistor 2SB1368DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 25W@ T = 25C CLow Collector Saturation Voltage-: V = -1.7V(Max)@ (I = -3A, I = -0.3A)CE(sat) C BComplement to Type 2SD2060Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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