2SB137 Datasheet and Replacement

   Type Designator: 2SB137
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 0.2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3

2SB137 Substitution

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2SB137 Datasheet (PDF)

0.1. Size:181K toshiba
2sb1375.pdf pdf_icon

0.2. Size:39K rohm
2sb1370.pdf pdf_icon

2SB1370TransistorsTransistors2SB1655 / 2SB1565(94L-411-B303)(94L-456-B349)319

0.3. Size:39K panasonic
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Transistor2SB1378Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SD19966.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for low-voltage operation and for converters.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolute Maximum R

0.4. Size:53K panasonic
2sb1377 e.pdf pdf_icon

Transistor2SB1377Silicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SD20712.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesAllowing supply with the radial taping.0.65 max.Absolute Maximum Ratings (Ta=25C)+0.1 0.450.05Parameter Symbol Ratings Unit2.5 0.5 2.5 0.5Collector to b

0.5. Size:44K panasonic
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0.6. Size:51K panasonic
2sb1371.pdf pdf_icon

Power Transistors2SB1371Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD206415.0 0.3 5.0 0.2Features11.0 0.2 3.2Satisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed t

0.7. Size:195K jmnic
2sb1375.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1375 DESCRIPTION With TO-220F package Complement to type 2SD2012 Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A Collector power dissipation: PC=25W(TC=25) APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (

0.8. Size:186K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SB1371 DESCRIPTION With TO-3PFa package Complement to type 2SD2064 High transition frequency Satisfactory linearity of hFE APPLICATIONS For high power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO C

0.9. Size:208K lge
2sb1370.pdf pdf_icon

2SB1370(PNP)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTE 1 2 3Features Breakdown Voltage High Reverse Cut-off Current Small Saturation Voltage Low Collector Power dissipation PCM : 2 W (Tamb=25) 30 W (Tcase=25) Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

0.10. Size:241K lge
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2SB1375(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High Power Dissipation: PC=25W(TC=25) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012 MAXIMUM RATINGS (TA=25 unless otherwise noted ) Dimensions in inches and (millimeters)Symbol Parameter

0.11. Size:198K inchange semiconductor
2sb1372.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1372DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2065Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

0.12. Size:209K inchange semiconductor
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isc Silicon PNP Power Transistor 2SB1370DESCRIPTIONLow Collector Saturation Voltage-: V = -0.3V(Typ.)@I = -2ACE(sat) CGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

0.13. Size:211K inchange semiconductor
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isc Silicon PNP Power Transistor 2SB1375DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type 2SD2012Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATI

0.14. Size:222K inchange semiconductor
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isc Silicon PNP Power Transistor 2SB1371DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2064Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

0.15. Size:204K inchange semiconductor
2sb1373.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1373DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2066Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .