2SB1456 Datasheet and Replacement
Type Designator: 2SB1456
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92MOD
2SB1456 Substitution
2SB1456 Datasheet (PDF)
2sb1453.pdf

DATA SHEETSILICON TRANSISTOR2SB1453PNP SILICON EPITAXIAL POWER TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING (UNIT: mm)the IC output. This transistor is ideal for motor drivers and solenoiddrivers in such as OA and FA equipment.In addition, a small resin-molded insulation type packagecontributes to high-density
2sb1455.pdf

JMnic Product SpecificationSilicon PNP Power Transistors 2SB1455 DESCRIPTION With TO-220F package Complement to type 2SD2203 Low collector saturation voltage: Large current capacity APPLICATIONS High current power switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 BaseAbsolute maximum ratings
2sb1455.pdf

isc Silicon PNP Power Transistor 2SB1455DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.5V(Max)@ (I = -4A, I = -0.4A)CE(sat) C BComplement to Type 2SD2203Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-current switching applications.AB
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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