2SB1466 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1466
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO247
2SB1466 Transistor Equivalent Substitute - Cross-Reference Search
2SB1466 Datasheet (PDF)
2sb1465.pdf
PRELIMINARY DATA SHEETDARLINGTON POWER TRANSISTOR2SB1465PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)frequency power amplifier and low-speed switching. This transistoris ideal for use in a direct drive from IC output to relay driv
2sb1462 e.pdf
Transistor2SB1462Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD22161.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-3zine packing.2Absolute Maximum Ratings (Ta=25C)Parameter S
2sb1462.pdf
Transistors2SB1462Silicon PNP epitaxial planar typeFor general amplificationUnit: mm0.2+0.1 0.15+0.1Complementary to 2SD22160.05 0.053 Features High forward current transfer ratio hFE SS-Mini type package allowing downsizing of the equipment andautomatic insertion through the tape packing1 2(0.5) (0.5)1.00.11.60.15 Absolute Maximum Rat
2sb1463 e.pdf
Transistor2SB1463Silicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SD22401.6 0.150.4 0.8 0.1 0.4FeaturesHigh collector to emitter voltage VCEO.1Low noise voltage NV.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2
2sb1462j e.pdf
Transistor2SB1462JSilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD2216J1.60 0.050.80 0.80 0.050.425 0.425FeaturesHigh foward current transfer ratio hFE.SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.+0.05Absolute Maximum Ratings (Ta=25C)
2sb1463.pdf
Transistors2SB1463Silicon PNP epitaxial planar typeUnit: mmFor high breakdown voltage low-frequency amplification0.2+0.1 0.15+0.10.05 0.05Complementary to 2SD22403 Features High collector-emitter voltage (Base open) VCEO Low noise voltage NV1 2(0.5) (0.5) SS-Mini type package, allowing downsizing of the equipment and1.00.1automatic insertion t
2sb1468.pdf
isc Silicon PNP Power Transistor 2SB1468DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -30V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.5V(Max)@ (I = -5A, I = -0.25A)CE(sat) C BComplement to Type 2SD2219Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed inverters,converters.ABSOL
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
