2SB1466 Specs and Replacement
Type Designator: 2SB1466
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO247
2SB1466 Substitution
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2SB1466 datasheet
PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT mm) frequency power amplifier and low-speed switching. This transistor is ideal for use in a direct drive from IC output to relay driv... See More ⇒
Transistor 2SB1462 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD2216 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 3 zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter S... See More ⇒
Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Unit mm 0.2+0.1 0.15+0.1 Complementary to 2SD2216 0.05 0.05 3 Features High forward current transfer ratio hFE SS-Mini type package allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.5) (0.5) 1.0 0.1 1.6 0.1 5 Absolute Maximum Rat... See More ⇒
Detailed specifications: 2SB1454, 2SB1455, 2SB1456, 2SB1457, 2SB146, 2SB1462, 2SB1463, 2SB1464, 2SA1015, 2SB147, 2SB1473, 2SB148, 2SB1481, 2SB1488, 2SB1489, 2SB149, 2SB1490
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