2SB1473 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1473
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250(typ) MHz
Collector Capacitance (Cc): 30(max) pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: MT2
2SB1473 Transistor Equivalent Substitute - Cross-Reference Search
2SB1473 Datasheet (PDF)
2sb1473 e.pdf
Transistor2SB1473Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to2SD22252.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.Satisfactory linearity of forward current transfer ratio hFE.0.65 max.High transition frequency fT.Allowing supply with the radial taping.+0.1 0.45
2sb1474.pdf
2SB1474TransistorPower Transistor (-80V, -4A)2SB1474 Features External dimensions (Units : mm)1) Darlington connection for a high hFE.2) Built-in resistor between base and emitter.5.5 1.53) Built-in damper doide.0.9C0.5 Absolute maximum ratings (Ta=25C) 0.8Min.(1) Base(Gate)1.52.5 (2) Collector(Drain)ROHM : CPT39.5Parameter Symbol Limits Unit (3) Emitter(Sour
2sb1470.pdf
Power Transistors2SB1470Silicon PNP triple diffusion planar type darlingtonUnit: mm20.00.5 5.00.3For power amplification(3.0)Complementary to 2SD2222 3.30.2 Features Optimum for 120 W HiFi output(1.5) High forward current transfer ratio hFE(1.5) Low collector-emitter saturation voltage VCE(sat) 2.00.32.70.33.00.31.00.20.60.2
2sb1475.pdf
SMD Type TransistorsPNP Transistors2SB1475 Features Super Miniature Package Low collector-emitter saturation voltage High DC Current1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - Co
2sb1477.pdf
isc Silicon PNP Power Transistor 2SB1477DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2236Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sb1478.pdf
isc Silicon PNP Darlington Power Transistor 2SB1478DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -2AFE CLow Collector Saturation Voltage-: V = -2.0V(Max.) @I = 5ACE(sat) CComplement to Type 2SD2237Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power linear and switching applications.ABSOLUTE MA
2sb1470.pdf
isc Silicon PNP Darlington Power Transistor 2SB1470DESCRIPTIONHigh forward current transfer ratio hFELow collector to emitter saturation voltage VCE(sat)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplificationOptimum for 120W HiFi output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
