2SB158 Specs and Replacement
Type Designator: 2SB158
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.06 W
Maximum Collector-Base Voltage |Vcb|: 7 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.005 A
Max. Operating Junction Temperature (Tj): 65 °C
Electrical Characteristics
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN: 55
Package: R19
2SB158 Substitution
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2SB158 datasheet
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Transistor 2SB1589 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 ... See More ⇒
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Detailed specifications: 2SB1558C, 2SB1559, 2SB156, 2SB1560, 2SB1562, 2SB156A, 2SB157, 2SB1570, TIP3055, 2SB1587, 2SB1588, 2SB159, 2SB16, 2SB160, 2SB161, 2SB162, 2SB1624
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