2SB166 Specs and Replacement
Type Designator: 2SB166
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.18 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 0.4 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: MM4
2SB166 Substitution
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2SB166 datasheet
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
DATA SHEET SILICON POWER TRANSISTOR 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from ORDERING INFORMATION the output of an IC. This transistor is ideal for OA and FA equipment Part No. Package such as motor and solenoid drivers. 2SB1669 TO-220AB 2SB1669-S TO-262 FEATURES 2SB1669-Z TO-220SMD High... See More ⇒
Detailed specifications: 2SB1626, 2SB163, 2SB164, 2SB1647, 2SB1648, 2SB1649, 2SB165, 2SB1659, MJE340, 2SB167, 2SB168, 2SB169, 2SB16A, 2SB17, 2SB170, 2SB171, 2SB172
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History: EFT343 | 2N1657 | 40053 | EN3011 | ED1801M | 2N1639 | 2N1722
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