PHP20NQ20T MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: PHP20NQ20T

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 150

Maximale Drain-Source-Spannung (Uds): 200V

Maximale Gate-Source-Spannung (Ugs):

Maximaler Drainstrom (Id): 20

Höchste Sperrschichttemperatur (Tj), °C:

Anstiegszeit (tr):

Drain-Kapazität (Cd), pF:

Ausgangswiderstand (Rds), Ohm: 0.13

Transistorgehäuse: TO220AB

Ersatz (vergleichstyp) für PHP20NQ20T Transistor

PHP20NQ20T - PDF-Dokument zum Download bereitstellen...

1.1. phb20nq20t_php20nq20t.pdf Size:105K _philips2

?C to 175?C - 200 V VDGR Drain-gate voltage Tj = 25 ?C to 175?C; RGS = 20 k? - 200 V VGS Gate-source voltage - ± 20 V ID Continuous drain current Tmb = 25 ?C; VGS = 10 V - 20 A Tmb = 100 ?C; VGS = 10 V - 14 A IDM Pulsed drain current Tmb = 25 ?C - 80 A PD Total power dissipation Tmb = 25 ?C - 150 W Tj, Tstg Operating junction and - 55 175 ?C storage temperature 1 It is not possible to make connection to pin:2 of the SOT404 package August 1999 1 Rev 1.000 Philips Semiconductors Produc

4.1. php20n06t_phb20n06t.pdf Size:334K _philips2

le 2: Quick reference data Symbol Parameter Conditions Typ Max Unit o VDS drain-source voltage (DC) Tj =25to175 C - 55 V ID drain current (DC) Tmb =25 °C; VGS =10V - 20.3 A Ptot total power dissipation Tmb =25 °C - 62 W Tj junction temperature - 175 °C RDSon drain-source on-state resistance VGS = 10 V; ID =10A Tj =25°C64 75 m? Tj = 175 °C - 150 m? 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Condition

4.2. php20n06e_1.pdf Size:54K _philips2

ID Drain current (DC) Tmb = 100 ?C - 15 A IDM Drain current (pulse peak value) Tmb = 25 ?C - 88 A Ptot Total power dissipation Tmb = 25 ?C - 75 W Tstg Storage temperature - - 55 175 ?C Tj Junction temperature - - 175 ?C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to - - 2 K/W mounting base Rth j-a Thermal resistance junction to - 60 - K/W ambient August 1996 1 Rev 1.000 Philips Semiconductors Product specification PowerM

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