PHP20NQ20T. Аналоги и основные параметры

Наименование производителя: PHP20NQ20T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm

Тип корпуса: TO220AB

Аналог (замена) для PHP20NQ20T

- подборⓘ MOSFET транзистора по параметрам

 

PHP20NQ20T даташит

 ..1. Size:105K  philips
 phb20nq20t php20nq20t.pdf pdf_icon

PHP20NQ20T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP20NQ20T, PHB20NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 20 A g RDS(ON) 130 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plasti

 ..2. Size:309K  nxp
 php20nq20t.pdf pdf_icon

PHP20NQ20T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.1. Size:334K  philips
 php20n06t phb20n06t.pdf pdf_icon

PHP20NQ20T

PHP20N06T; PHB20N06T N-channel TrenchMOS transistor Rev. 01 22 February 2001 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP20N06T in SOT78 (TO-220AB) PHB20N06T in SOT404 (D 2-PAK). 2. Features Very low on-state resistance Fast switching. 3. Applications

 8.2. Size:54K  philips
 php20n06e 1.pdf pdf_icon

PHP20NQ20T

Philips Semiconductors Product specification PowerMOS transistor PHP20N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 22 A Switched Mode Power Supplies Ptot Total power dissipation 75 W (SMPS), mo

ПОКАЗАТЬ ЕЩЁ

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