PHP20NQ20T Datasheet and Replacement

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP20NQ20T, PHB20NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 20 AgRDS(ON) 130 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plasti

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PHP20N06T; PHB20N06TN-channel TrenchMOS transistorRev. 01 22 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP20N06T in SOT78 (TO-220AB)PHB20N06T in SOT404 (D 2-PAK).2. Features Very low on-state resistance Fast switching.3. Applications

Philips Semiconductors Product specification PowerMOS transistor PHP20N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 22 ASwitched Mode Power Supplies Ptot Total power dissipation 75 W(SMPS), mo

PHP20N06TN-channel TrenchMOS standard level FETRev. 02 27 November 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe