BD827-10 PDF and Equivalents Search

 

BD827-10 PDF Specs and Replacement


   Type Designator: BD827-10
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO202
 

 BD827-10 Substitution

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BD827-10 PDF detailed specifications

 9.1. Size:211K  inchange semiconductor
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BD827-10

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD827 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain Low Saturation Voltage Complement to Type BD828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits. ... See More ⇒

Detailed specifications: BD826 , BD826-10 , BD826-16 , BD826-25 , BD826-6 , BD826A , BD826B , BD827 , 2SC2240 , BD827-16 , BD827-25 , BD827-6 , BD827A , BD827B , BD828 , BD828-10 , BD828-16 .

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