AP9997GH-HF Todos los transistores

 

AP9997GH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9997GH-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: TO-252

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AP9997GH-HF datasheet

 ..1. Size:97K  ape
 ap9997gh-hf ap9997gj-hf.pdf pdf_icon

AP9997GH-HF

AP9997GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11A G RoHS Compliant & Halogen-Free S Description G D Advanced Power MOSFETs from APEC provide the S TO-252(H) designer with the best combination of fast

 6.1. Size:1435K  cn vbsemi
 ap9997gh.pdf pdf_icon

AP9997GH-HF

AP9997GH www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS

 6.2. Size:286K  inchange semiconductor
 ap9997gh.pdf pdf_icon

AP9997GH-HF

isc N-Channel MOSFET Transistor AP9997GH FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.12 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 7.1. Size:182K  ape
 ap9997gm.pdf pdf_icon

AP9997GH-HF

AP9997GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 95V D2 D2 Single Drive Requirement RDS(ON) 110m D1 D1 Surface Mount Package ID 3A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, rugge

MOSTRAR MÁS

Otros transistores... AP9992GP-A-HF , AP9992GP-HF , AP9992GR-HF , AP9995GH-HF , AP9995GJ-HF , AP9997AGH-HF , AP9997BGH-HF , AP9997BGJ-HF , K4145 , AP9997GJ-HF , AP9997GK , AP9997GM , AP9997GP-HF , AP9998GH-HF , AP9998GS-HF , AP99T03GP-HF , AP99T03GS-HF .

History: SI4946BEY-T1 | BRD2N60 | SI4559EY

 

 

 

 

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