AP9997GH-HF Specs and Replacement

Type Designator: AP9997GH-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO-252

AP9997GH-HF substitution

- MOSFET ⓘ Cross-Reference Search

 

AP9997GH-HF datasheet

 ..1. Size:97K  ape
 ap9997gh-hf ap9997gj-hf.pdf pdf_icon

AP9997GH-HF

AP9997GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11A G RoHS Compliant & Halogen-Free S Description G D Advanced Power MOSFETs from APEC provide the S TO-252(H) designer with the best combination of fast... See More ⇒

 6.1. Size:1435K  cn vbsemi
 ap9997gh.pdf pdf_icon

AP9997GH-HF

AP9997GH www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS... See More ⇒

 6.2. Size:286K  inchange semiconductor
 ap9997gh.pdf pdf_icon

AP9997GH-HF

isc N-Channel MOSFET Transistor AP9997GH FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.12 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 7.1. Size:182K  ape
 ap9997gm.pdf pdf_icon

AP9997GH-HF

AP9997GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 95V D2 D2 Single Drive Requirement RDS(ON) 110m D1 D1 Surface Mount Package ID 3A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, rugge... See More ⇒

SHOW MORE

Detailed specifications: AP9992GP-A-HF, AP9992GP-HF, AP9992GR-HF, AP9995GH-HF, AP9995GJ-HF, AP9997AGH-HF, AP9997BGH-HF, AP9997BGJ-HF, K4145, AP9997GJ-HF, AP9997GK, AP9997GM, AP9997GP-HF, AP9998GH-HF, AP9998GS-HF, AP99T03GP-HF, AP99T03GS-HF

Keywords - AP9997GH-HF MOSFET specs

 AP9997GH-HF cross reference

 AP9997GH-HF equivalent finder

 AP9997GH-HF pdf lookup

 AP9997GH-HF substitution

 AP9997GH-HF replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility