AP9997GH-HF Todos los transistores

 

AP9997GH-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9997GH-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: TO-252
 

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AP9997GH-HF Datasheet (PDF)

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 ap9997gh-hf ap9997gj-hf.pdf pdf_icon

AP9997GH-HF

AP9997GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11AG RoHS Compliant & Halogen-FreeSDescriptionGDAdvanced Power MOSFETs from APEC provide theS TO-252(H)designer with the best combination of fast

 6.1. Size:1435K  cn vbsemi
 ap9997gh.pdf pdf_icon

AP9997GH-HF

AP9997GHwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

 6.2. Size:286K  inchange semiconductor
 ap9997gh.pdf pdf_icon

AP9997GH-HF

isc N-Channel MOSFET Transistor AP9997GHFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.12(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 7.1. Size:182K  ape
 ap9997gm.pdf pdf_icon

AP9997GH-HF

AP9997GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 95VD2D2 Single Drive Requirement RDS(ON) 110mD1D1 Surface Mount Package ID 3AG2S2G1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,rugge

MOSTRAR MÁS

Otros transistores... AP9992GP-A-HF , AP9992GP-HF , AP9992GR-HF , AP9995GH-HF , AP9995GJ-HF , AP9997AGH-HF , AP9997BGH-HF , AP9997BGJ-HF , IRFB3607 , AP9997GJ-HF , AP9997GK , AP9997GM , AP9997GP-HF , AP9998GH-HF , AP9998GS-HF , AP99T03GP-HF , AP99T03GS-HF .

History: HPM3401A | IXFH150N17T2 | AO4202 | 2N3993 | AO4264 | AP65SL045AFWL | 2SK2394

 

 
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