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J113
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J113
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10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRFL024N
AUIRFP064N ..BF351
BF352 ..BLF6G22LS-180RN
BLF6G22LS-40P ..BSC0908NS
BSC0909NS ..BSZ067N06LS3G
BSZ076N06NS3G ..BUK7509-55A
BUK7509-75A ..BUK9608-55
BUK9608-55A ..BUZ908P
BUZ90A ..CEF10N4
CEF10N6 ..CEP730G
CEP73A3G ..DMG4468LK3
DMG4496SSS ..ECH8659
ECH8660 ..FDB3652_F085
FDB3672_F085 ..FDD6778A
FDD6780A ..FDMC8026S
FDMC8026S ..FDP100N10
FDP10N60NZ ..FDS4685
FDS4897AC ..FK10KM-10
FK10KM-12 ..FQD2N60C
FQD2N80 ..FQPF8N60CF
FQPF8N60CF ..FRS9130R
FRS9140D ..H5N2004DS
H5N2005DL ..HAT2070R
HAT2071R ..HUF75329S3ST
HUF75332G3 ..IPB025N10N3G
IPB027N10N3G ..IPD170N04NG
IPD180N10N3G ..IPI80N04S4L-04
IPI80N06S2-07 ..IPP90R800C3
IPS0151S ..IRF2903ZS
IRF2907Z ..IRF6608
IRF6609 ..IRF7469
IRF7470 ..IRF9612
IRF9613 ..IRFH5110
IRFH5204 ..IRFP150V
IRFP151 ..IRFR3711Z
IRFR3711ZC ..IRFS841
IRFS842 ..IRFW730A
IRFW740A ..IRLBA3803P
IRLBL1304 ..IRLW510A
IRLW520A ..IXFH21N50F
IXFH21N50Q ..IXFK80N60P3
IXFK88N20Q ..IXFR140N30P
IXFR14N100Q2 ..IXFX160N30T
IXFX16N90 ..IXTA48P05T
IXTA4N60P ..IXTH50N20
IXTH50N25T ..IXTP22N50PM
IXTP230N075T2 ..IXTT30N50P
IXTT30N60L2 ..KF1N60I
KF1N60L ..KML0D3P20V
KML0D4N20TV ..MCH3475
MCH3476 ..MTB60A06Q8
MTB60B06Q8 ..MTN3055L3
MTN3055M3 ..NCV8405
NCV8406 ..NTD4808N
NTD4809N ..NTTFS4939N
NTTFS4941N ..PHX3N60E
PHX4N60E ..PSMN2R2-25YLC
PSMN2R2-30YLC ..RFD14N05L
RFD14N05LSM ..RJK0629DPE
RJK0629DPK ..RQK0608BQDQS
RQK0609CQDQS ..SDF1NA60JDA
SDF200NA10HE ..SFW9620
SFW9624 ..SMK0860P
SMK0870F ..SML6060AN
SML6060BN ..SPP08P06PH
SPP11N60C3 ..SSH20N50
SSH20N50A ..SSM5P16FE
SSM5P16FU ..SSS6N60
SSS6N70A ..STD150N3LLH6
STD155N3H6 ..STE53NC50
STE70NM50 ..STK14N05
STK14N06 ..STP20NM60FP
STP20NM65N ..STP75NF68
STP75NF75 ..STW12NK60Z
STW12NK80Z ..TK13A25D
TK13A45D ..TPC8013-H
TPC8014 ..TPCC8008
TPCC8009 ..UT40N03T
UT40N04 ..ZVN3320A
ZVN3320F ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

J113 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: J113

Tipo de FET: FET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35

Tensión drenaje-fuente (Uds): 35

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 0.05

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF: 3

Resistencia drenaje-fuente RDS (on), Ohm: 30

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de MOSFET J113

J113 PDF doc:

1.1. j111_j112_j113_cnv.pdf Size:31K _philips

J113
J113
DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES 1 handbook, halfpage 2 3 d High speed switching g s Interchangeability of drain and MAM042 source connections Low RDS on at zero gate voltage PINNING 1 = gate Fig.1 Simplified outline and symbol, TO-92. 2 = source 3 = drain Note: Drain and source are interchangeable. QUICK REFERENCE DATA J111 J112 J113 Drain-source voltage VDS max. 40 40 40 V Drain current VDS = 15 V; VGS =0 IDSS min. 20 5 2 mA Total power dissipation up to Tamb =50 CPtot max. 400 400 400 mW Gate-source cut-off voltage min.

1.2. pmbfj111_pmbfj112_pmbfj113_cnv_2.pdf Size:32K _philips2

J113
J113
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low RDSon at zero gate voltage d ( < 30 ? for PMBFJ111). g s DESCRIPTION 12 Symmetrical N-channel junction Top view MAM385 FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers Fig.1 Simplified outline and symbol. and thin and thick film hybrids. PINNING - SOT23 LIMITING VALUES PIN DESCRIPTION In accordance with the Absolute Maximum Rating System (IEC 134). 1 drain SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 2 source VDS drain-source voltage - 40 V 3 gate VGSO gate-source voltage - -40 V Note VGDO drain

1.3. pmbfj111_pmbfj112_pmbfj113.pdf Size:47K _philips2

J113
J113
PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 3 gate 1 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ111; PMBFJ112; PMBFJ113 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package; 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBF

1.4. ssm3j113tu.pdf Size:133K _toshiba

J113
J113
SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications 2.0V drive Unit: mm Low on-resistance: Ron = 449m? (max) (@VGS = -2.0 V) 2.10.1 Ron = 249m? (max) (@VGS = -2.5 V) 1.70.1 Ron = 169m? (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source voltage VDS -20 V Gate-Source voltage VGSS 12 V DC ID -1.7 Drain current A Pulse IDP -3.4 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C 1: Gate Note: Using continuously under heavy loads (e.g. the application of 2: Source high temperature/current/voltage and the significant change in 3: Drain temperature, etc.) may cause this product to decrease in the UFM reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the a

1.5. j111_j112_j113_mmbfj111_mmbfj112_mmbfj113.pdf Size:488K _fairchild_semi

J113
J113
J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark: 6P / 6R / 6S NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage - 35 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J111-113 *MMBFJ1

1.6. j111_j112_j113_sst111_sst112_sst113.pdf Size:52K _vishay

J113
J113
J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 3 to 10 30 5 4 J/SST112 1 to 5 50 5 4 J/SST113 v3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches D Fast SwitchingtON: 4 ns D High-Speed Analog Circuit Performance D Choppers D Low Leakage: 5 pA D Negligible Off-Error, Excellent Accuracy D Sample-and-Hold D Low Capacitance: 3 pF D Good Frequency Response, Low Glitches D Normally On Switches D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters DESCRIPTION The J/SST111 series consists of all-purpose analog switches For similar products in TO-206AA(TO-18) packaging, see the designed to support a wide range of applications. The 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and J/SST113 are useful in a high-gain amplifier mode. 2N5564/5565/5566 (duals) dat

1.7. 2sj113.pdf Size:43K _hitachi

J113
J113

Otros transistores... IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , J111 , J112 , IRFP250 , J211 , J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 , JANSR2N7294 , JANSR2N7395 .

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