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J113
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J113
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J113
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10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP0203GMT-HF
AP02N40H-HF ..AP2306AGEN-HF
AP2306AGN-HF ..AP4409GEM
AP4409GEP-HF ..AP6680BGM-HF
AP6680BGYT-HF ..AP9487GM-HF
AP94T07GH-HF ..AP9974GJ-HF
AP9974GP-HF ..APT5040CNR
APT50M50JVFR ..AUIRFP4368
AUIRFP4410Z ..BF545B
BF545C ..BLF6G27LS-100
BLF6G27LS-135 ..BSC110N06NS3G
BSC118N10NSG ..BSZ110N06NS3G
BSZ120P03NS3EG ..BUK75150-55A
BUK7516-55A ..BUK9614-55
BUK9614-55A ..CEA3252
CEA6200 ..CEF630N
CEF6601 ..CEP840G
CEP840L ..DMG8601UFG
DMG8822UTS ..EFC4612R
EFC4615R ..FDB5680
FDB5690 ..FDD8424H
FDD8424H_F085 ..FDMC86102LZ
FDMC86106LZ ..FDP15N40
FDP15N40 ..FDS6294
FDS6294 ..FK14KM-9
FK14SM-10 ..FQD4P25
FQD5N20L ..FQS4903
FQT13N06 ..FRX130D4
FRX130H1 ..H5N2507P
H5N2508DL ..HAT2096H
HAT2099H ..HUF75339P3
HUF75339S3 ..IPB039N10N3G
IPB041N04NG ..IPD30N03S2L-10
IPD30N03S2L-20 ..IPI90N06S4-04
IPI90N06S4L-04 ..IPS50R520CP
IPU039N03LG ..IRF3205ZS
IRF330 ..IRF6622
IRF6623 ..IRF7501
IRF7503 ..IRF9640
IRF9640S ..IRFH5302
IRFH5302D ..IRFP233
IRFP240 ..IRFR420A
IRFR4615 ..IRFS9143
IRFS9230 ..IRFY044C
IRFY120 ..IRLHM630
IRLHS2242 ..IRLWZ34A
IRLWZ44A ..IXFH24N50
IXFH24N50Q ..IXFL32N120P
IXFL34N100 ..IXFR180N15P
IXFR18N90P ..IXFX20N120
IXFX20N120P ..IXTA60N10T
IXTA60N20T ..IXTH60N20L2
IXTH60N25 ..IXTP2N60P
IXTP2N80 ..IXTT50P085
IXTT50P10 ..KF3N50DS
KF3N50DZ ..KP103K
KP103L ..MCH6331
MCH6336 ..MTB90P06J3
MTB90P06Q8 ..MTN3418N3
MTN3418S3 ..NDB5060
NDB5060L ..NTD4860N
NTD4863N ..NTZD3154N
NTZD3155C ..PMBF4391
PMBF4392 ..PSMN3R0-60ES
PSMN3R0-60PS ..RFD15P06SM
RFD16N03L ..RJK0658DPA
RJK0659DPA ..RRH100P03
RRH140P03 ..SDF230JDA
SDF240 ..SGM0410S
SGM2305A ..SMK1060FJ
SMK1060P ..SML60B21
SML60B25 ..SPP15P10PG
SPP15P10PLH ..SSH40N15A
SSH40N20 ..SSM6J214FE
SSM6J215FE ..SST308
SST309 ..STD16NF06L
STD16NF25 ..STF10NM65N
STF11N52K3 ..STK22N06
STK23N05L ..STP22NF03L
STP22NM60N ..STP7NA40
STP7NA40FI ..STW14NK50Z
STW15N50 ..TK13J65U
TK13P25D ..TPC8026
TPC8027 ..TPCC8074
TPCC8076 ..UT4435
UT4446 ..ZVN4306AV
ZVN4306G ..ZXMS6006SG
 
MOSFET. Manual. Hoja de especificaciones. Datasheet
 

J113 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: J113

Tipo de FET: FET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35

Tensión drenaje-fuente (Uds): 35

Tensión compuerta-fuente (Ugs):

Corriente continua de drenaje (Id): 0.05

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr):

Conductancia de drenaje-sustrato (Cd), pF: 3

Resistencia drenaje-fuente RDS (on), Ohm: 30

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de MOSFET J113

J113 PDF doc:

1.1. j111_j112_j113_cnv.pdf Size:31K _philips

J113
J113
DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES 1 handbook, halfpage 2 3 d High speed switching g s Interchangeability of drain and MAM042 source connections Low RDS on at zero gate voltage PINNING 1 = gate Fig.1 Simplified outline and symbol, TO-92. 2 = source 3 = drain Note: Drain and source are interchangeable. QUICK REFERENCE DATA J111 J112 J113 Drain-source voltage VDS max. 40 40 40 V Drain current VDS = 15 V; VGS =0 IDSS min. 20 5 2 mA Total power dissipation up to Tamb =50 CPtot max. 400 400 400 mW Gate-source cut-off voltage min.

1.2. pmbfj111_pmbfj112_pmbfj113_cnv_2.pdf Size:32K _philips2

J113
J113
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low RDSon at zero gate voltage d ( < 30 ? for PMBFJ111). g s DESCRIPTION 12 Symmetrical N-channel junction Top view MAM385 FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers Fig.1 Simplified outline and symbol. and thin and thick film hybrids. PINNING - SOT23 LIMITING VALUES PIN DESCRIPTION In accordance with the Absolute Maximum Rating System (IEC 134). 1 drain SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 2 source VDS drain-source voltage - 40 V 3 gate VGSO gate-source voltage - -40 V Note VGDO drain

1.3. pmbfj111_pmbfj112_pmbfj113.pdf Size:47K _philips2

J113
J113
PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 3 gate 1 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ111; PMBFJ112; PMBFJ113 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package; 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBF

1.4. ssm3j113tu.pdf Size:133K _toshiba

J113
J113
SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications 2.0V drive Unit: mm Low on-resistance: Ron = 449m? (max) (@VGS = -2.0 V) 2.10.1 Ron = 249m? (max) (@VGS = -2.5 V) 1.70.1 Ron = 169m? (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source voltage VDS -20 V Gate-Source voltage VGSS 12 V DC ID -1.7 Drain current A Pulse IDP -3.4 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C 1: Gate Note: Using continuously under heavy loads (e.g. the application of 2: Source high temperature/current/voltage and the significant change in 3: Drain temperature, etc.) may cause this product to decrease in the UFM reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the a

1.5. j111_j112_j113_mmbfj111_mmbfj112_mmbfj113.pdf Size:488K _fairchild_semi

J113
J113
J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark: 6P / 6R / 6S NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage - 35 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J111-113 *MMBFJ1

1.6. j111_j112_j113_sst111_sst112_sst113.pdf Size:52K _vishay

J113
J113
J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 3 to 10 30 5 4 J/SST112 1 to 5 50 5 4 J/SST113 v3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches D Fast SwitchingtON: 4 ns D High-Speed Analog Circuit Performance D Choppers D Low Leakage: 5 pA D Negligible Off-Error, Excellent Accuracy D Sample-and-Hold D Low Capacitance: 3 pF D Good Frequency Response, Low Glitches D Normally On Switches D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters DESCRIPTION The J/SST111 series consists of all-purpose analog switches For similar products in TO-206AA(TO-18) packaging, see the designed to support a wide range of applications. The 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and J/SST113 are useful in a high-gain amplifier mode. 2N5564/5565/5566 (duals) dat

1.7. 2sj113.pdf Size:43K _hitachi

J113
J113

Otros transistores... IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , J111 , J112 , IRFP250 , J211 , J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 , JANSR2N7294 , JANSR2N7395 .

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