J113 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: J113
Тип транзистора: JFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 35 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.05 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 3 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 30 Ohm
Тип корпуса: TO92
J113 Datasheet (PDF)
j111 j112 j113 cnv.pdf
DISCRETE SEMICONDUCTORSDATA SHEETJ111; J112; J113N-channel silicon field-effecttransistorsJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors J111; J112; J113DESCRIPTIONSymmetrical silicon n-channeljunction FETs in plastic TO-92envelopes. They are intended forapp
j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf
J111 MMBFJ111J112 MMBFJ112J113 MMBFJ113GSG TO-92S SOT-23 DDMark: 6P / 6R / 6SNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabilized amplifiers. Sourcedfrom Process 51.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG D
j111 j112 j113 sst111 sst112 sst113.pdf
J/SST111 SeriesVishay SiliconixN-Channel JFETsJ111 SST111J112 SST112J113 SST113PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST111 3 to 10 30 5 4J/SST112 1 to 5 50 5 4J/SST113 v3 100 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 111
pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low
pmbfj111 pmbfj112 pmbfj113.pdf
PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
ssm3j113tu.pdf
SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications 2.0V driveUnit: mm Low on-resistance: Ron = 449m (max) (@VGS = -2.0 V) 2.10.1Ron = 249m (max) (@VGS = -2.5 V) 1.70.1Ron = 169m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-
mmbfj111 mmbfj112 mmbfj113.pdf
August 2012J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113N-Channel SwitchFeatures This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable.MMBFJ111J111 MMBFJ112J112 MMBFJ112_SB51338J113 MMBFJ113GSSOT-23G TO-92 Mark
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918