J113 Todos los transistores

 

J113 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: J113

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.4 W

Tensión drenaje-fuente (Vds): 35 V

Corriente continua de drenaje (Id): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 3 pF

Resistencia drenaje-fuente RDS(on): 30 Ohm

Empaquetado / Estuche: TO92

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J113 Datasheet (PDF)

1.1. mmbfj111 mmbfj112 mmbfj113.pdf Size:151K _update_mosfet

J113
J113

August 2012 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable. MMBFJ111 J111 MMBFJ112 J112 MMBFJ112_SB51338 J113 MMBFJ113 G S SOT-23 G TO-92 Mark

1.2. j111 j112 j113 cnv.pdf Size:31K _philips

J113
J113

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors J111; J112; J113 DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applic

 1.3. pmbfj111 pmbfj112 pmbfj113.pdf Size:47K _philips2

J113
J113

PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). 1.3 Applications Analog switches Choppers Comm

1.4. pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf Size:32K _philips2

J113
J113

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low RDSon at

 1.5. ssm3j113tu.pdf Size:133K _toshiba

J113
J113

SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications • 2.0V drive Unit: mm • Low on-resistance: Ron = 449m? (max) (@VGS = -2.0 V) 2.1±0.1 Ron = 249m? (max) (@VGS = -2.5 V) 1.7±0.1 Ron = 169m? (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25°C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source

1.6. j111 j112 j113 mmbfj111 mmbfj112 mmbfj113.pdf Size:488K _fairchild_semi

J113
J113

J111 MMBFJ111 J112 MMBFJ112 J113 MMBFJ113 G S G TO-92 S SOT-23 D D Mark: 6P / 6R / 6S NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain

1.7. j111 j112 j113 sst111 sst112 sst113.pdf Size:52K _vishay

J113
J113

J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 3 to 10 30 5 4 J/SST112 1 to 5 50 5 4 J/SST113 v3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Low Error Voltage D Analog Switches D Fast SwitchingtON: 4 ns D High-Speed An

1.8. 2sj113.pdf Size:43K _hitachi

J113

Otros transistores... IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , J109 , J110 , J111 , J112 , IRFP250 , J211 , J212 , JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 , JANSR2N7294 , JANSR2N7395 .

 
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