BDV64 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV64/A/B/C DESCRIPTION Collector Current -IC= -12A Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A Complement to Type BDV65/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T

isc Silicon PNP Darlington Power Transistor BDV64/A/B/CDESCRIPTIONCollector Current -I = -12ACCollector-Emitter Saturation Voltage-: V = -2.0V(Max.)@ I = -5ACE(sat) CComplement to Type BDV65/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applic

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDV64/64A/64B/64C DESCRIPTION With TO-3PN package Complement to type BDV65/65A/65B/65C DARLINGTON High DC current gain APPLICATIONS For use in general purpose amplifier applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO

Order this documentMOTOROLAby BDV65B/DSEMICONDUCTOR TECHNICAL DATANPNBDV65BPNPComplementary Silicon PlasticBDV64BPower Darlingtons. . . for use as output devices in complementary general purpose amplifier applica-tions.DARLINGTONS High DC Current Gain10 AMPERESHFE = 1000 (min.) @ 5 AdcCOMPLEMENTARY Monolithi

BDV65B (NPN),BDV64B (PNP)Complementary SiliconPlastic Power Darlingtons. . . for use as output devices in complementary general purposeamplifier applications.http://onsemi.comFeatures10 AMPERE DARLINGTON High DC Current Gain - HFE = 1000 (min) @ 5 AdcCOMPLEMENTARY SILICON Monolithic Construction with Built-in Base Emitter Shunt ResistorsPOWER TRANSISTORS These