BDV64 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDV64
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 400 pF
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar BDV64
BDV64 Datasheet (PDF)
bdv64 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV64/A/B/C DESCRIPTION Collector Current -IC= -12A Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A Complement to Type BDV65/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T
bdv64 bdv64a bdv64b bdv64c.pdf
isc Silicon PNP Darlington Power Transistor BDV64/A/B/CDESCRIPTIONCollector Current -I = -12ACCollector-Emitter Saturation Voltage-: V = -2.0V(Max.)@ I = -5ACE(sat) CComplement to Type BDV65/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applic
bdv64 64a 64b 64c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDV64/64A/64B/64C DESCRIPTION With TO-3PN package Complement to type BDV65/65A/65B/65C DARLINGTON High DC current gain APPLICATIONS For use in general purpose amplifier applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO
bdv64b bdv65b.pdf
Order this documentMOTOROLAby BDV65B/DSEMICONDUCTOR TECHNICAL DATANPNBDV65BPNPComplementary Silicon PlasticBDV64BPower Darlingtons. . . for use as output devices in complementary
bdv64bg.pdf
BDV65B (NPN),BDV64B (PNP)Complementary SiliconPlastic Power Darlingtons. . . for use as output devices in complementary general purposeamplifier applications.http://onsemi.comFeatures10 AMPERE DARLINGTON High DC Current Gain - HFE = 1000 (min) @ 5 AdcCOMPLEMENTARY SILICON Monolithic Construction with Built-in Base Emitter Shunt ResistorsPOWER TRANSISTORS These
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
