BDV64 Datasheet. Specs and Replacement
Type Designator: BDV64
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO218
BDV64 Substitution
- BJT ⓘ Cross-Reference Search
BDV64 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV64/A/B/C DESCRIPTION Collector Current -IC= -12A Collector-Emitter Saturation Voltage- VCE(sat)= -2.0V(Max.)@ IC= -5A Complement to Type BDV65/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
bdv64 bdv64a bdv64b bdv64c.pdf 
isc Silicon PNP Darlington Power Transistor BDV64/A/B/C DESCRIPTION Collector Current -I = -12A C Collector-Emitter Saturation Voltage- V = -2.0V(Max.)@ I = -5A CE(sat) C Complement to Type BDV65/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applic... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDV64/64A/64B/64C DESCRIPTION With TO-3PN package Complement to type BDV65/65A/65B/65C DARLINGTON High DC current gain APPLICATIONS For use in general purpose amplifier applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO... See More ⇒
Detailed specifications: BDV37, BDV38, BDV45, BDV46, BDV47, BDV48, BDV49, BDV50, 2SD2499, BDV64A, BDV64B, BDV64C, BDV65, BDV65A, BDV65B, BDV65C, BDV66
Keywords - BDV64 pdf specs
BDV64 cross reference
BDV64 equivalent finder
BDV64 pdf lookup
BDV64 substitution
BDV64 replacement
