FDP054N10 PDF Specs and Replacement
Type Designator: FDP054N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 263 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 144 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO220
FDP054N10 substitution
FDP054N10 PDF Specs
fdp054n10.pdf
August 2010 FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5m Features Description RDS(on) = 4.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performance. ... See More ⇒
fdp054n10.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FDP038AN06A0 , FDP040N06 , FDP045N10AF102 , STM4637 , FDP047N08 , FDP047N10 , STM4635 , FDP050AN06A0 , AON7403 , STM4633 , FDP060AN08A0 , FDP075N15AF102 , FDP083N15AF102 , FDP085N10AF102 , STM4615 , FDP090N10 , STM4605 .
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