FDP054N10 PDF and Equivalents Search

 

FDP054N10 PDF Specs and Replacement


   Type Designator: FDP054N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 263 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 144 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO220
 

 FDP054N10 substitution

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FDP054N10 PDF Specs

 ..1. Size:269K  fairchild semi
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FDP054N10

August 2010 FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5m Features Description RDS(on) = 4.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performance. ... See More ⇒

 ..2. Size:914K  onsemi
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FDP054N10

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..3. Size:283K  inchange semiconductor
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FDP054N10

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 9.1. Size:1440K  fairchild semi
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FDP054N10

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Detailed specifications: FDP038AN06A0 , FDP040N06 , FDP045N10AF102 , STM4637 , FDP047N08 , FDP047N10 , STM4635 , FDP050AN06A0 , AON7403 , STM4633 , FDP060AN08A0 , FDP075N15AF102 , FDP083N15AF102 , FDP085N10AF102 , STM4615 , FDP090N10 , STM4605 .

Keywords - FDP054N10 MOSFET specs

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