FDP054N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDP054N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 263 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 144 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 156 nC
Resistencia entre drenaje y fuente RDS(on): 0.0055 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET FDP054N10
FDP054N10 Datasheet (PDF)
fdp054n10.pdf
August 2010FDP054N10N-Channel PowerTrench MOSFET 100V, 144A, 5.5mFeatures Description RDS(on) = 4.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performance.
fdp054n10.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdp054n10.pdf
isc N-Channel MOSFET Transistor FDP054N10FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 5.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
fdp053n08b.pdf
June 2014FDP053N08BN-Channel PowerTrench MOSFET 80 V, 120 A, 5.3 mFeatures Description RDS(on) = 4.2 m (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on) * QGlored to minimize the on-state resistance while maintaining superior switching performance.
fdb050an06a0 fdp050an06a0.pdf
February 2003FDB050AN06A0 / FDP050AN06A0N-Channel PowerTrench MOSFET60V, 80A, 5mFeatures Applications rDS(ON) = 4.3m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 61nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pul
fdp050an06a0 fdb050an06a0.pdf
FDP050AN06A0 / FDB050AN06A0N-Channel PowerTrench MOSFET60 V, 80 A, 5 mFeatures RDS(on) = 4.3 m ( Typ.) @ VGS = 10 V, ID = 80 A Applications QG(tot) = 61 nC ( Typ.) @ VGS = 10 V Synchronous Rectification for ATX / Server / Telecom PSU Low Miller Charge Battery Protection Circuit Low Qrr Body Diode Motor drives and Uninterruptible Power Supplies
fdp053n08b.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDP053N08BFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIM
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: HM85N80 | BSS169 | L2N7002SLT1G | HM2807
