IXGR40N60C2D1 Datasheet and Replacement
Type Designator: IXGR40N60C2D1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 170 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 56 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 180 pF
Qg ⓘ - Total Gate Charge, typ: 95 nC
Package: ISOPLUS247
IXGR40N60C2D1 substitution
IXGR40N60C2D1 Datasheet (PDF)
ixgr40n60c2d1.pdf
IXGR 40N60C2 VCES = 600 VHiPerFASTTM IGBTIXGR 40N60C2D1 IC25 = 56 AISOPLUS247TMVCE(SAT) = 2.7 VC2-Class High Speed IGBTstfi(typ = 32 ns(Electrically Isolated Back Surface)Preliminary Data SheetISOPLUS 247TM(IXGR)IXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCISOLATED TABEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVG
ixgr40n60c2.pdf
IXGR 40N60C2 VCES = 600 VHiPerFASTTM IGBTIXGR 40N60C2D1 IC25 = 56 AISOPLUS247TMVCE(SAT) = 2.7 VC2-Class High Speed IGBTstfi(typ = 32 ns(Electrically Isolated Back Surface)Preliminary Data SheetISOPLUS 247TM(IXGR)IXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCISOLATED TABEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVG
ixgr40n60cd1.pdf
VCES = 600 VIXGR 40N60CHiPerFASTTM IGBTIC25 = 75 AIXGR 40N60CD1ISOPLUS247TMVCE(sat) = 2.7 V(Electrically Isolated Backside)tfi(typ) = 75 nsPreliminary Data Sheet(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Back
ixgr40n60c.pdf
VCES = 600 VIXGR 40N60CHiPerFASTTM IGBTIC25 = 75 AIXGR 40N60CD1ISOPLUS247TMVCE(sat) = 2.7 V(Electrically Isolated Backside)tfi(typ) = 75 nsPreliminary Data Sheet(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Back
Datasheet: IXGR35N120C , IXGR39N60B , IXGR39N60BD1 , IXGR40N60B , IXGR40N60B2 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , FGH30S130P , IXGR40N60CD1 , IXGR48N60B3 , IXGR48N60B3D1 , IXGR48N60C3D1 , IXGR50N160H1 , IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 .
Keywords - IXGR40N60C2D1 transistor datasheet
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