IXGR40N60C2D1 Todos los transistores

 

IXGR40N60C2D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGR40N60C2D1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.7

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 56

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 32

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: ISOPLUS247

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IXGR40N60C2D1 Datasheet (PDF)

1.1. ixgr40n60bd1.pdf Size:53K _ixys

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60B HiPerFASTTM IGBT IC25 = 70 A IXGR 40N60BD1 ISOPLUS247TM VCE(sat) = 2.1 V (Electrically Isolated Backside) tfi(typ) = 180 ns (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 VCES TJ = 25°C to 150°C 600 V E153432 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C 70 A C E Isolated Backsi

1.2. ixgr40n60b2d1.pdf Size:499K _ixys

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60B2 HiPerFASTTM IGBT IXGR 40N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 1.9 V C2-Class High Speed IGBTs tfi typ = 82 ns (Electrically Isolated Back Surface) Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25°C to 150°C 600 V V

 1.3. ixgr40n60c.pdf Size:510K _ixys

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGR 40N60CD1 ISOPLUS247TM VCE(sat) = 2.7 V (Electrically Isolated Backside) tfi(typ) = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Back

1.4. ixgr40n60cd1.pdf Size:510K _ixys

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGR 40N60CD1 ISOPLUS247TM VCE(sat) = 2.7 V (Electrically Isolated Backside) tfi(typ) = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Back

 1.5. ixgr40n60b.pdf Size:53K _ixys

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60B HiPerFASTTM IGBT IC25 = 70 A IXGR 40N60BD1 ISOPLUS247TM VCE(sat) = 2.1 V (Electrically Isolated Backside) tfi(typ) = 180 ns (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 VCES TJ = 25°C to 150°C 600 V E153432 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C 70 A C E Isolated Backsi

1.6. ixgr40n60c2.pdf Size:173K _ixys

IXGR40N60C2D1
IXGR40N60C2D1

IXGR 40N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 40N60C2D1 IC25 = 56 A ISOPLUS247TM VCE(SAT) = 2.7 V C2-Class High Speed IGBTs tfi(typ = 32 ns (Electrically Isolated Back Surface) Preliminary Data Sheet ISOPLUS 247TM (IXGR) IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C ISOLATED TAB E VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VG

1.7. ixgr40n60b2.pdf Size:499K _ixys

IXGR40N60C2D1
IXGR40N60C2D1

VCES = 600 V IXGR 40N60B2 HiPerFASTTM IGBT IXGR 40N60B2D1 IC25 = 75 A ISOPLUS247TM VCE(sat) = 1.9 V C2-Class High Speed IGBTs tfi typ = 82 ns (Electrically Isolated Back Surface) Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25°C to 150°C 600 V V

1.8. ixgr40n60c2d1.pdf Size:173K _ixys

IXGR40N60C2D1
IXGR40N60C2D1

IXGR 40N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 40N60C2D1 IC25 = 56 A ISOPLUS247TM VCE(SAT) = 2.7 V C2-Class High Speed IGBTs tfi(typ = 32 ns (Electrically Isolated Back Surface) Preliminary Data Sheet ISOPLUS 247TM (IXGR) IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C ISOLATED TAB E VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VG

Otros transistores... IXGR35N120C , IXGR39N60B , IXGR39N60BD1 , IXGR40N60B , IXGR40N60B2 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , IRGB4062D , IXGR40N60CD1 , IXGR48N60B3 , IXGR48N60B3D1 , IXGR48N60C3D1 , IXGR50N160H1 , IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 .

 

 
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