IXGR40N60C2D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGR40N60C2D1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 170 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 56 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 180 pF
Paquete / Cubierta: ISOPLUS247
Búsqueda de reemplazo de IXGR40N60C2D1 IGBT
IXGR40N60C2D1 datasheet
ixgr40n60c2d1.pdf
IXGR 40N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 40N60C2D1 IC25 = 56 A ISOPLUS247TM VCE(SAT) = 2.7 V C2-Class High Speed IGBTs tfi(typ = 32 ns (Electrically Isolated Back Surface) Preliminary Data Sheet ISOPLUS 247TM (IXGR) IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C ISOLATED TAB E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VG
ixgr40n60c2.pdf
IXGR 40N60C2 VCES = 600 V HiPerFASTTM IGBT IXGR 40N60C2D1 IC25 = 56 A ISOPLUS247TM VCE(SAT) = 2.7 V C2-Class High Speed IGBTs tfi(typ = 32 ns (Electrically Isolated Back Surface) Preliminary Data Sheet ISOPLUS 247TM (IXGR) IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C ISOLATED TAB E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VG
ixgr40n60cd1.pdf
VCES = 600 V IXGR 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGR 40N60CD1 ISOPLUS247TM VCE(sat) = 2.7 V (Electrically Isolated Backside) tfi(typ) = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Back
ixgr40n60c.pdf
VCES = 600 V IXGR 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGR 40N60CD1 ISOPLUS247TM VCE(sat) = 2.7 V (Electrically Isolated Backside) tfi(typ) = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Back
Otros transistores... IXGR35N120C , IXGR39N60B , IXGR39N60BD1 , IXGR40N60B , IXGR40N60B2 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , TGD30N40P , IXGR40N60CD1 , IXGR48N60B3 , IXGR48N60B3D1 , IXGR48N60C3D1 , IXGR50N160H1 , IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 .
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