MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
SPD06N80C3
  SPD06N80C3
  SPD06N80C3
 
SPD06N80C3
  SPD06N80C3
  SPD06N80C3
 
SPD06N80C3
  SPD06N80C3
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AP18T10GH-HF
AP18T10GI ..AP4036AGYT-HF
AP4085I ..AP55T06GS-HF
AP55T10GH-HF ..AP9450GYT-HF
AP9451GG-HF ..AP9970GK-HF
AP9970GP-HF ..APT40M35PVR
APT40M42JN ..AUIRFB3206
AUIRFB3207 ..BF1208
BF1208D ..BLF6G15L-500H
BLF6G15LS-500H ..BSC052N03LS
BSC052N03SG ..BSS84L
BSS84LT1 ..BUK7215-55A
BUK72150-55A ..BUK9520-55
BUK9520-55A ..BUZ902DP
BUZ902P ..CEDF634
CEDF640 ..CEP3100
CEP3120 ..DMC4028SSD
DMC4040SSD ..EC3A04B
EC4401C ..FDB120N10
FDB12N50F ..FDD5N50
FDD5N50F ..FDMC7660
FDMC7660 ..FDP025N06
FDP030N06 ..FDS3992
FDS3992 ..FDV305N
FDY1002PZ ..FQD12P10TM_F085
FQD13N06 ..FQPF5N40
FQPF5N40 ..FRS140D
FRS140H ..H12N65F
H2301N ..HAT2033R
HAT2036R ..HUF75307D3
HUF75307D3S ..IPA65R600E6
IPA65R660CFD ..IPD068P03L3G
IPD075N03LG ..IPI60R385CP
IPI60R520CP ..IPP80N06S2-09
IPP80N06S2-H5 ..IRF1607
IRF1902 ..IRF635
IRF636A ..IRF7416Q
IRF741FI ..IRF9520N
IRF9520NL ..IRFF310
IRFF320 ..IRFP044
IRFP044N ..IRFR224A
IRFR2307Z ..IRFS721
IRFS722 ..IRFU9120N
IRFU9121 ..IRL630S
IRL631 ..IRLU2908
IRLU3103 ..IXFH150N17T
IXFH150N17T2 ..IXFK48N60Q3
IXFK50N50 ..IXFP4N100P
IXFP4N100PM ..IXFV26N60P
IXFV26N60PS ..IXTA26P20P
IXTA28P065T ..IXTH36P10
IXTH36P15P ..IXTP180N085T
IXTP180N10T ..IXTT100N25P
IXTT10N100D ..JANSR2N7402
JANSR2N7403 ..KMB6D0DN30QA
KMB6D0DN30QB ..KU2307K
KU2307Q ..MTB30N06J3
MTB30N06Q8 ..MTN2328N3
MTN2342N3 ..MTP4835V8
MTP50P03HDL ..NTB5605P
NTB60N06 ..NTP6413AN
NTR0202PL ..PHP7N60E
PHP80N06LT ..PSMN102-200Y
PSMN130-200D ..RF1S30P05SM
RF1S30P06SM ..RJK03C0DPA
RJK03C1DPB ..RQJ0303PGDQA
RQJ0304DQDQA ..SDF120JAB-U
SDF120JDA-D ..SFT1423
SFT1431 ..SMG5409
SMK0160 ..SML50L47
SML50M60BFN ..SPI15N60C3
SPI15N60CFD ..SSG4940N
SSG4940NC ..SSM3K36FS
SSM3K36MFV ..SSR3055A
SSR3055LA ..STD10NM60ND
STD10NM65N ..STE150N10
STE15N100 ..STI24NM65N
STI26NM60N ..STP19N06
STP19N06FI ..STP60NS04ZB
STP62NS04Z ..STV4NA60
STV4NA80 ..TK100F06K3
TK10A50D ..TPC6008-H
TPC6009-H ..TPCA8102
TPCA8103 ..UT2N10
UT3006 ..WTU1333
WTX1012 ..ZXMP6A17E6
ZXMP6A17G ..ZXMS6006SG
 
SPD06N80C3 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SPD06N80C3 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SPD06N80C3

Type of SPD06N80C3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 800

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 6

Maximum junction temperature (Tj), °C:

Rise Time of SPD06N80C3 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.9

Package: DPAK_TO252

Equivalent transistors for SPD06N80C3

SPD06N80C3 PDF doc:

1.1. spd06n80c3_rev2.91.pdf Size:554K _infineon

SPD06N80C3
SPD06N80C3
SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 0.9 ? DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO252-3 Ultra low gate charge Ultra low effective capacitances CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward ) Type Package Marking SPD06N80C3 PG-TO252-3 06N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 6 A D A T =100 C 3.8 A I T =25 C 18 Pulsed drain current2) D,pulse A E I =1.2 A, V =50 V Avalanche energy, single pulse 230 mJ AS D DD 2),3) E I =6 A, V =50 V 0.2 Avalanche energy, repetitive t AR D DD AR 2),3) I 6 Avalanche current, repetitive t A AR

4.1. spd06n60c3_rev.1.5.pdf Size:636K _infineon

SPD06N80C3
SPD06N80C3
SPD06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 ? DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO252 Extreme dv /dt rated Improved transconductance Type Package Ordering Code Marking SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 6.2 A D C T =100 C 3.9 C I T =25 C 18.6 Pulsed drain current1) D,pulse C E I =3.1 A, V =50 V Avalanche energy, single pulse 200 mJ AS D DD 1),2) E I =6.2 A, V =50 V 0.5 Avalanche energy, repetitive t AR D DD AR 1) I 6.2 Avalanche current, repetitive t A AR AR I =6.2 A, V =480 V, D DS Drain source voltage slope dv /dt 50 V/ns T =125 C j V Gate source voltage static 20 V GS V AC (f >1 Hz) 30 GS

See also transistors datasheet: SPD03N60S5 , SPD04N50C3 , SPD04N60C3 , SPD04N60S5 , SPD04N80C3 , SPD04P10PG , SPD04P10PLG , SPD06N60C3 , 2SK117 , SPD07N20G , SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , SPD08P06PG , SPD09P06PLG , SPD15P10PG , SPD15P10PLG .

Keywords

 SPD06N80C3 Datasheet  SPD06N80C3 Datenblatt  SPD06N80C3 RoHS  SPD06N80C3 Distributor
 SPD06N80C3 Application Notes  SPD06N80C3 Component  SPD06N80C3 Circuit  SPD06N80C3 Schematic
 SPD06N80C3 Equivalent  SPD06N80C3 Cross Reference  SPD06N80C3 Data Sheet  SPD06N80C3 Fiche Technique

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