MOSFET Datasheet


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SPD06N80C3
  SPD06N80C3
  SPD06N80C3
 
SPD06N80C3
  SPD06N80C3
  SPD06N80C3
 
SPD06N80C3
  SPD06N80C3
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..NDB6051L
NDB6060 ..NTD5406N
NTD5407N ..NVD5890N
NVMFD5877NL ..PMBFJ113
PMBFJ210 ..PSMN4R0-25YLC
PSMN4R0-30YL ..RFD3N08L
RFD3N08LSM ..RJK1021DPN
RJK1028DNS ..RSD080P05
RSD100N10 ..SDF350
SDF360JEA ..SGSP301
SGSP311 ..SMK1625F
SMK1625FJ ..SML7516DFN
SML8016DFN ..SPS01N60C3
SPS02N60C3 ..SSH60N10A
SSH6N55 ..SSM6J503NU
SSM6J50TU ..SSU50N10
SSW1N50A ..STD17N06T4
STD17NF03L ..STF13NK50Z
STF13NM60N ..STK5006P
STK6N20 ..STP26NM60N
STP27N3LH5 ..STP80NF10
STP80NF10FP ..STW19NM50N
STW20N95K5 ..TK15H50C
TK15J50D ..TPC8039-H
TPC8040-H ..TPCF8004
TPCF8101 ..UT6401
UT6402 ..ZVNL120A
ZVNL120G ..ZXMS6006SG
 
SPD06N80C3 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SPD06N80C3 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SPD06N80C3

Type of SPD06N80C3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 800

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 6

Maximum junction temperature (Tj), °C:

Rise Time of SPD06N80C3 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.9

Package: DPAK_(TO252)

Equivalent transistors for SPD06N80C3

SPD06N80C3 PDF doc:

1.1. spd06n80c3_rev2.91.pdf Size:554K _infineon

SPD06N80C3
SPD06N80C3
SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 0.9 ? DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO252-3 Ultra low gate charge Ultra low effective capacitances CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward ) Type Package Marking SPD06N80C3 PG-TO252-3 06N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 6 A D A T =100 C 3.8 A I T =25 C 18 Pulsed drain current2) D,pulse A E I =1.2 A, V =50 V Avalanche energy, single pulse 230 mJ AS D DD 2),3) E I =6 A, V =50 V 0.2 Avalanche energy, repetitive t AR D DD AR 2),3) I 6 Avalanche current, repetitive t A AR

4.1. spd06n60c3_rev.1.5.pdf Size:636K _infineon

SPD06N80C3
SPD06N80C3
SPD06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 ? DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO252 Extreme dv /dt rated Improved transconductance Type Package Ordering Code Marking SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 6.2 A D C T =100 C 3.9 C I T =25 C 18.6 Pulsed drain current1) D,pulse C E I =3.1 A, V =50 V Avalanche energy, single pulse 200 mJ AS D DD 1),2) E I =6.2 A, V =50 V 0.5 Avalanche energy, repetitive t AR D DD AR 1) I 6.2 Avalanche current, repetitive t A AR AR I =6.2 A, V =480 V, D DS Drain source voltage slope dv /dt 50 V/ns T =125 C j V Gate source voltage static 20 V GS V AC (f >1 Hz) 30 GS

See also transistors datasheet: SPD03N60S5 , SPD04N50C3 , SPD04N60C3 , SPD04N60S5 , SPD04N80C3 , SPD04P10PG , SPD04P10PLG , SPD06N60C3 , 2SK117 , SPD07N20G , SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , SPD08P06PG , SPD09P06PLG , SPD15P10PG , SPD15P10PLG .

Keywords

 SPD06N80C3 Datasheet  SPD06N80C3 Datenblatt  SPD06N80C3 RoHS  SPD06N80C3 Distributor
 SPD06N80C3 Application Notes  SPD06N80C3 Component  SPD06N80C3 Circuit  SPD06N80C3 Schematic
 SPD06N80C3 Equivalent  SPD06N80C3 Cross Reference  SPD06N80C3 Data Sheet  SPD06N80C3 Fiche Technique

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