MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
SPD06N80C3
  SPD06N80C3
  SPD06N80C3
 
SPD06N80C3
  SPD06N80C3
  SPD06N80C3
 
SPD06N80C3
  SPD06N80C3
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB150N10
FDB15N50 ..FDD8778
FDD8780 ..FDMS8460
FDMS86101 ..FDS4435BZ
FDS4435BZ_F085 ..FK20VS-5
FK20VS-6 ..FQP16N25
FQP17N40 ..FRE460H
FRE460R ..FSL430D
FSL430R ..H7N0312LD
H7N0312LM ..HAT2187WP
HAT2188WP ..HUF76132P3
HUF76132S3S ..IPB120N06S4-H1
IPB123N10N3G ..IPD60R600CP
IPD60R600E6 ..IPP076N12N3G
IPP080N03LG ..IRC150
IRC220 ..IRF3711ZS
IRF3717 ..IRF6725M
IRF6726M ..IRF7755G
IRF7756G ..IRFB3207Z
IRFB3207ZG ..IRFI4410ZG
IRFI460 ..IRFP352
IRFP353 ..IRFS231
IRFS232 ..IRFSL3806
IRFSL38N20D ..IRFZ34NS
IRFZ35 ..IRLM014A
IRLM110A ..IXBH20N160
IXBH40N140 ..IXFH58N20Q
IXFH5N100P ..IXFN102N30P
IXFN106N20 ..IXFR64N50Q3
IXFR64N60P ..IXFX52N60Q2
IXFX55N50 ..IXTC36P15P
IXTC62N15P ..IXTK150N15P
IXTK160N20 ..IXTP60N28TM-A
IXTP62N15P ..IXTV22N60PS
IXTV230N085T ..KF70N06P
KF7N50D ..KP731V
KP737A ..MMBF4391L
MMBF4392 ..MTD6N15
MTD6N20E ..MTN5N60I3
MTN5N60J3 ..NDD04N60Z
NDD05N50Z ..NTGD3148N
NTGD4161P ..OM5N100SA
OM6N100SA ..PML260SN
PML340SN ..PSMN7R0-100XS
PSMN7R0-30YL ..RFL1N10L
RFP10P03L ..RJK2006DPF
RJK2006DPJ ..RSQ045N03
RSR010N10 ..SDF350
SDF360JEA ..SGM0410S
SGM2305A ..SMK0825F
SMK0825FC ..SML6040HN
SML6045AN ..SPD30N03S2L-10G
SPD30N03S2L-20G ..SSG4801
SSG4825P ..SSM3K17FU
SSM3K301T ..SSP7N80A
SSP80N06A ..STB7N52K3
STB7NK80Z ..STD6NF10
STD6NK50Z ..STH14N50
STH14N50FI ..STM4605
STM4615 ..STP24NM60N
STP24NM65N ..STP7N20
STP7N20FI ..STT4660
STT468A ..STW14NK50Z
STW15N50 ..TK15H50C
TK15J50D ..TPC8039-H
TPC8040-H ..TPCF8004
TPCF8101 ..UT6401
UT6402 ..ZVNL120A
ZVNL120G ..ZXMS6006SG
 
SPD06N80C3 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SPD06N80C3 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SPD06N80C3

Type of SPD06N80C3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 800

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 6

Maximum junction temperature (Tj), °C:

Rise Time of SPD06N80C3 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.9

Package: DPAK_TO252

Equivalent transistors for SPD06N80C3

SPD06N80C3 PDF doc:

1.1. spd06n80c3_rev2.91.pdf Size:554K _infineon

SPD06N80C3
SPD06N80C3
SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 0.9 ? DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO252-3 Ultra low gate charge Ultra low effective capacitances CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward ) Type Package Marking SPD06N80C3 PG-TO252-3 06N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 6 A D A T =100 C 3.8 A I T =25 C 18 Pulsed drain current2) D,pulse A E I =1.2 A, V =50 V Avalanche energy, single pulse 230 mJ AS D DD 2),3) E I =6 A, V =50 V 0.2 Avalanche energy, repetitive t AR D DD AR 2),3) I 6 Avalanche current, repetitive t A AR

4.1. spd06n60c3_rev.1.5.pdf Size:636K _infineon

SPD06N80C3
SPD06N80C3
SPD06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 ? DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO252 Extreme dv /dt rated Improved transconductance Type Package Ordering Code Marking SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 6.2 A D C T =100 C 3.9 C I T =25 C 18.6 Pulsed drain current1) D,pulse C E I =3.1 A, V =50 V Avalanche energy, single pulse 200 mJ AS D DD 1),2) E I =6.2 A, V =50 V 0.5 Avalanche energy, repetitive t AR D DD AR 1) I 6.2 Avalanche current, repetitive t A AR AR I =6.2 A, V =480 V, D DS Drain source voltage slope dv /dt 50 V/ns T =125 C j V Gate source voltage static 20 V GS V AC (f >1 Hz) 30 GS

See also transistors datasheet: SPD03N60S5 , SPD04N50C3 , SPD04N60C3 , SPD04N60S5 , SPD04N80C3 , SPD04P10PG , SPD04P10PLG , SPD06N60C3 , 2SK117 , SPD07N20G , SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , SPD08P06PG , SPD09P06PLG , SPD15P10PG , SPD15P10PLG .

Keywords

 SPD06N80C3 Datasheet  SPD06N80C3 Datenblatt  SPD06N80C3 RoHS  SPD06N80C3 Distributor
 SPD06N80C3 Application Notes  SPD06N80C3 Component  SPD06N80C3 Circuit  SPD06N80C3 Schematic
 SPD06N80C3 Equivalent  SPD06N80C3 Cross Reference  SPD06N80C3 Data Sheet  SPD06N80C3 Fiche Technique

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