MOSFET Datasheet


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SPD06N80C3
  SPD06N80C3
  SPD06N80C3
 
SPD06N80C3
  SPD06N80C3
  SPD06N80C3
 
SPD06N80C3
  SPD06N80C3
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP02N70EJ
AP02N90H-HF ..AP2311GK-HF
AP2311GN-HF ..AP4419GH
AP4419GJ ..AP6921GMT-HF
AP6922GMT-HF ..AP9561GH-HF
AP9561GI-HF ..AP9980GH
AP9980GJ ..APT6027HVR
APT6030BN ..AUIRFR3504
AUIRFR3504Z ..BF904AR
BF904AWR ..BLF7G10LS-250
BLF7G15LS-200 ..BSC190N15NS3G
BSC196N10NSG ..BSZ42DN25NS3G
BSZ440N10NS3G ..BUK7535-55A
BUK753R1-40B ..BUK9628-100A
BUK9628-55 ..CEB04N7G
CEB05N65 ..CEG8208
CEH2288 ..CES2306
CES2307 ..DMN2005K
DMN2005LP4K ..EMH2801
F5001H ..FDB8160_F085
FDB8160_F085 ..FDD86102
FDD86102 ..FDMC8884
FDMC8884 ..FDP2572
FDP2614 ..FDS6673BZ
FDS6673BZ_F085 ..FK16VS-6
FK18SM-10 ..FQD7N30
FQD7P06 ..FQT7N10L
FQU10N20C ..FSF250D
FSF250R ..H5N3004P
H5N3005LD ..HAT2139H
HAT2140H ..HUF75545S3S
HUF75623P3 ..IPB065N06LG
IPB065N15N3G ..IPD35N10S3L-26
IPD400N06NG ..IPP030N10N3G
IPP032N06N3G ..IPW60R041C6
IPW60R045CP ..IRF3703
IRF3704Z ..IRF6645
IRF6646 ..IRF7530
IRF7555 ..IRF9Z20
IRF9Z22 ..IRFH8325
IRFH8330 ..IRFP251
IRFP252 ..IRFR9024N
IRFR9024NC ..IRFS9532
IRFS9533 ..IRFY9120
IRFY9120C ..IRLI530N
IRLI540A ..IRLZ34NL
IRLZ34NS ..IXFH30N50P
IXFH30N50Q3 ..IXFM10N100
IXFM10N90 ..IXFR26N120P
IXFR26N50 ..IXFX26N60Q
IXFX26N90 ..IXTA80N12T2
IXTA86N20T ..IXTH6N90
IXTH6N90A ..IXTP3N100D2
IXTP3N100P ..IXTT80N20L
IXTT82N25P ..KF4N65F
KF4N65P ..KP505B
KP505G ..MCH6603
MCH6604 ..MTBC7N10N3
MTC1016S6R ..MTN3N60J3
MTN3N65FP ..NDB6060L
NDB608A ..NTD5413N
NTD5414N ..NVMFS4841N
NVTFS4823N ..PMBFJ211
PMBFJ212 ..PSMN4R0-40YS
PSMN4R1-30YLC ..RFD4N06L
RFD4N06LSM ..RJK1028DPA
RJK1028DSP ..RSD140P06
RSD150N06 ..SDF360JEB
SDF360JEC ..SGSP316
SGSP317 ..SMK1820D
SMK1820D2 ..SML801R2AN
SML801R2BN ..SPS03N60C3
SPS04N60C3 ..SSH6N60
SSH6N70 ..SSM6J51TU
SSM6J53FE ..SSW1N60A
SSW2N60A ..STD17NF25
STD18N55M5 ..STF14NM50N
STF15NM60ND ..STK7002
STK7006P ..STP28NM50N
STP2N60 ..STP80NF12
STP80NF55-06 ..STW20NA50
STW20NK50Z ..TK15J60T
TK15J60U ..TPC8041
TPC8042 ..TPCF8102
TPCF8103 ..UT65N03
UT6898 ..ZVNL535A
ZVP0120A ..ZXMS6006SG
 
SPD06N80C3 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SPD06N80C3 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SPD06N80C3

Type of SPD06N80C3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 800

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 6

Maximum junction temperature (Tj), °C:

Rise Time of SPD06N80C3 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.9

Package: DPAK_TO252

Equivalent transistors for SPD06N80C3

SPD06N80C3 PDF doc:

1.1. spd06n80c3_rev2.91.pdf Size:554K _infineon

SPD06N80C3
SPD06N80C3
SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 0.9 ? DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO252-3 Ultra low gate charge Ultra low effective capacitances CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward ) Type Package Marking SPD06N80C3 PG-TO252-3 06N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 6 A D A T =100 C 3.8 A I T =25 C 18 Pulsed drain current2) D,pulse A E I =1.2 A, V =50 V Avalanche energy, single pulse 230 mJ AS D DD 2),3) E I =6 A, V =50 V 0.2 Avalanche energy, repetitive t AR D DD AR 2),3) I 6 Avalanche current, repetitive t A AR

4.1. spd06n60c3_rev.1.5.pdf Size:636K _infineon

SPD06N80C3
SPD06N80C3
SPD06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 ? DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO252 Extreme dv /dt rated Improved transconductance Type Package Ordering Code Marking SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 6.2 A D C T =100 C 3.9 C I T =25 C 18.6 Pulsed drain current1) D,pulse C E I =3.1 A, V =50 V Avalanche energy, single pulse 200 mJ AS D DD 1),2) E I =6.2 A, V =50 V 0.5 Avalanche energy, repetitive t AR D DD AR 1) I 6.2 Avalanche current, repetitive t A AR AR I =6.2 A, V =480 V, D DS Drain source voltage slope dv /dt 50 V/ns T =125 C j V Gate source voltage static 20 V GS V AC (f >1 Hz) 30 GS

See also transistors datasheet: SPD03N60S5 , SPD04N50C3 , SPD04N60C3 , SPD04N60S5 , SPD04N80C3 , SPD04P10PG , SPD04P10PLG , SPD06N60C3 , 2SK117 , SPD07N20G , SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , SPD08P06PG , SPD09P06PLG , SPD15P10PG , SPD15P10PLG .

Keywords

 SPD06N80C3 Datasheet  SPD06N80C3 Datenblatt  SPD06N80C3 RoHS  SPD06N80C3 Distributor
 SPD06N80C3 Application Notes  SPD06N80C3 Component  SPD06N80C3 Circuit  SPD06N80C3 Schematic
 SPD06N80C3 Equivalent  SPD06N80C3 Cross Reference  SPD06N80C3 Data Sheet  SPD06N80C3 Fiche Technique

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