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SPD06N80C3 MOSFET (IC) Datasheet. Cross Reference Search. SPD06N80C3 Equivalent

Type Designator: SPD06N80C3

Type of SPD06N80C3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 800

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 6

Maximum junction temperature (Tj), °C:

Rise Time of SPD06N80C3 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.9

Package: DPAK_TO252

SPD06N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SPD06N80C3 PDF doc:

1.1. spd06n80c3_rev2.91.pdf Size:554K _infineon


SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 0.9 ? DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO252-3 Ultra low gate charge Ultra low effective capacitances

4.1. spd06n60c3_rev.1.5.pdf Size:636K _infineon


SPD06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 ? DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO252 Extreme dv /dt rated Improved transconductance Type Package Ordering Code Marking SPD06N60C3

See also transistors datasheet: SPD03N60S5 , SPD04N50C3 , SPD04N60C3 , SPD04N60S5 , SPD04N80C3 , SPD04P10PG , SPD04P10PLG , SPD06N60C3 , 2SK117 , SPD07N20G , SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , SPD08P06PG , SPD09P06PLG , SPD15P10PG , SPD15P10PLG .

Search Terms:

 SPD06N80C3 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply





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