SPD06N80C3 PDF and Equivalents Search

 

SPD06N80C3 Specs and Replacement

Type Designator: SPD06N80C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO252

SPD06N80C3 substitution

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SPD06N80C3 datasheet

 ..1. Size:554K  infineon
 spd06n80c3.pdf pdf_icon

SPD06N80C3

SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.9 DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO252-3 Ultra low gate charge Ultra low effe... See More ⇒

 ..2. Size:245K  inchange semiconductor
 spd06n80c3.pdf pdf_icon

SPD06N80C3

isc N-Channel MOSFET Transistor SPD06N80C3,ISPD06N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.9 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8... See More ⇒

 8.1. Size:636K  infineon
 spd06n60c3.pdf pdf_icon

SPD06N80C3

SPD06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO252 Extreme dv /dt rated Improved transconductance Type Package Ordering Code ... See More ⇒

 8.2. Size:245K  inchange semiconductor
 spd06n60c3.pdf pdf_icon

SPD06N80C3

isc N-Channel MOSFET Transistor SPD06N60C3,ISPD06N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.75 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage ... See More ⇒

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Detailed specifications: SPD03N60S5, SPD04N50C3, SPD04N60C3, SPD04N60S5, SPD04N80C3, SPD04P10PG, SPD04P10PLG, SPD06N60C3, EMB04N03H, SPD07N20G, SPD07N60C3, SPD07N60S5, SPD08N50C3, SPD08P06PG, SPD09P06PLG, SPD15P10PG, SPD15P10PLG

Keywords - SPD06N80C3 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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