SPD06N80C3 Datasheet and Replacement

SPD06N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.9DS(on)max Extreme dv/dt ratedQ 31 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO252-3 Ultra low gate charge Ultra low effe

isc N-Channel MOSFET Transistor SPD06N80C3,ISPD06N80C3FEATURESStatic drain-source on-resistance:RDS(on)0.9Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 8

SPD06N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.75DS(on),max Ultra low gate chargeI 6.2 AD Periodic avalanche rated High peak current capability Ultra low effective capacitancesPG-TO252 Extreme dv /dt rated Improved transconductanceType Package Ordering Code

isc N-Channel MOSFET Transistor SPD06N60C3,ISPD06N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.75Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage