SPD06N80C3 - параметры транзистора MOSFET, его аналоги, datasheet

SPD06N80C3 Datasheet (PDF)

..1. Size:554K infineon
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SPD06N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.9DS(on)max Extreme dv/dt ratedQ 31 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO252-3 Ultra low gate charge Ultra low effe

..2. Size:245K inchange semiconductor
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isc N-Channel MOSFET Transistor SPD06N80C3,ISPD06N80C3FEATURESStatic drain-source on-resistance:RDS(on)0.9Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 8

8.1. Size:636K infineon
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SPD06N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.75DS(on),max Ultra low gate chargeI 6.2 AD Periodic avalanche rated High peak current capability Ultra low effective capacitancesPG-TO252 Extreme dv /dt rated Improved transconductanceType Package Ordering Code

8.2. Size:245K inchange semiconductor
spd06n60c3.pdf pdf_icon

isc N-Channel MOSFET Transistor SPD06N60C3,ISPD06N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.75Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .