UK1398 Datasheet and Replacement
Type Designator: UK1398
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
Package: TO-92 SOT-223
UK1398 substitution
UK1398 Datasheet (PDF)
uk1398.pdf

UNISONIC TECHNOLOGIES CO., LTD UK1398 Power MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING 1 DESCRIPTION TO-92 The UTC UK1398 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate 3voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES 12* RDS(ON)
buk139-50dl.pdf

Philips Semiconductors Product specification Logic level TOPFET BUK139-50DL D-PAK version of BUK118-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 16 Aplastic package. PD
Datasheet: UTT30P04 , UTT30P06 , UTT40P04 , UTT50P04 , UTT50P06 , UTT65P04 , UD4809 , UF1404 , IRF4905 , UM6K31N , UMBF170 , UP672 , UT100N03 , UT100N03-Q , UT108N03 , UT110N03 , UT120N03 .
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