UK1398 Datasheet and Replacement
Type Designator: UK1398
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
Package: TO-92 SOT-223
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UK1398 Datasheet (PDF)
uk1398.pdf

UNISONIC TECHNOLOGIES CO., LTD UK1398 Power MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING 1 DESCRIPTION TO-92 The UTC UK1398 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate 3voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES 12* RDS(ON)
buk139-50dl.pdf

Philips Semiconductors Product specification Logic level TOPFET BUK139-50DL D-PAK version of BUK118-50DLDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin surface mount ID Continuous drain current 16 Aplastic package. PD
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FCPF7N60YDTU | SM6A12NSFP | AP6679GI-HF | H7N1002LM | SPD04N60S5
Keywords - UK1398 MOSFET datasheet
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History: FCPF7N60YDTU | SM6A12NSFP | AP6679GI-HF | H7N1002LM | SPD04N60S5



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