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IRF440 MOSFET (IC) Datasheet. Cross Reference Search. IRF440 Equivalent

Type Designator: IRF440

Type of IRF440 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 8

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF440 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 610

Maximum drain-source on-state resistance (Rds), Ohm: 1.8

Package: TO3

IRF440 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF440 PDF doc:

1.1. irf440.pdf Size:142K _international_rectifier

IRF440
IRF440

PD - 90372A REPETITIVE AVALANCHE AND dv/dt RATED IRF440 500V, N-CHANNEL HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF440 500V 0.85? 8.0A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very

5.1. irf4435.pdf Size:211K _international_rectifier

IRF440
IRF440

PD- 94243 IRF4435 HEXFET® Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -30V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020? Top View Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. Thi

See also transistors datasheet: IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF9540N , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF4905 , IRF4905L , IRF4905S .

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