IRF440 Specs and Replacement
Type Designator: IRF440
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 73 max nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO3
IRF440 substitution
- MOSFET ⓘ Cross-Reference Search
IRF440 datasheet
irf440.pdf
PD - 90372A REPETITIVE AVALANCHE AND dv/dt RATED IRF440 500V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF440 500V 0.85 8.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design... See More ⇒
irf4435.pdf
PD- 94243 IRF4435 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -30V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020 Top View Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon ar... See More ⇒
irf4410a irf4410h.pdf
RoHS IRF4410 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (97A, 100Volts) DESCRIPTION The Nell IRF4410 is a three-terminal silicon D device with current conduction capability of 97A, D fast switching speed, low on-state resistance, breakdown voltage rating of 100V ,and max. threshold voltage of 4 volts. G They are designed for use in application... See More ⇒
Detailed specifications: IRF3415S, IRF350, IRF3515S, IRF360, IRF3710, IRF3710L, IRF3710S, IRF430, IRF1405, IRF450, IRF451, IRF452, IRF453, IRF460, IRF4905, IRF4905L, IRF4905S
Keywords - IRF440 MOSFET specs
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