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IRF460 MOSFET (IC) Datasheet. Cross Reference Search. IRF460 Equivalent

Type Designator: IRF460

Type of IRF460 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 300

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 21

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF460 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 4300

Maximum drain-source on-state resistance (Rds), Ohm: 0.31

Package: TO3

IRF460 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF460 PDF doc:

1.1. irf460.pdf Size:140K _international_rectifier

IRF460
IRF460

PD -90467 REPETITIVE AVALANCHE AND dv/dt RATED IRF460 500V, N-CHANNEL HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF460 500V 0.27? 21 The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

See also transistors datasheet: IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , APT50M38JLL , IRF4905 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 .

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