All MOSFET. IRF460 Datasheet


IRF460 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF460

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 140 nC

Drain-Source Capacitance (Cd): 4300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.31 Ohm

Package: TO3

IRF460 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF460 Datasheet (PDF)

0.1. irf460.pdf Size:140K _international_rectifier


PD -90467 REPETITIVE AVALANCHE AND dv/dt RATED IRF460 500V, N-CHANNEL HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF460 500V 0.27Ω 21 The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design ach

0.2. irf460b irf460c.pdf Size:413K _nell


RoHS IRF460 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 20A, 500Volts DESCRIPTION D The Nell IRF460 is a three-terminal silicon device with current conduction capability of 20A, fast switching speed, low on-state resistance, breakdown voltage rating of 500V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G


Datasheet: IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , APT50M38JLL , IRF4905 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 .


Back to Top