All MOSFET. IRF460 Datasheet

 

IRF460 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF460

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 4300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.31 Ohm

Package: TO3

IRF460 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF460 Datasheet (PDF)

1.1. irf460.pdf Size:140K _international_rectifier

IRF460
IRF460

PD -90467 REPETITIVE AVALANCHE AND dv/dt RATED IRF460 500V, N-CHANNEL HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF460 500V 0.27? 21 The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

Datasheet: IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , APT50M38JLL , IRF4905 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 .

 


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