IRF460 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF460

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente |Vds|: 500 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 21 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 190(max) nC

Tiempo de elevación (tr): 120(max) nS

Conductancia de drenaje-sustrato (Cd): 1000 pF

Resistencia drenaje-fuente RDS(on): 0.27 Ohm

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de MOSFET IRF460

IRF460 Datasheet (PDF)

..1. irf460.pdf Size:140K _international_rectifier

PD -90467REPETITIVE AVALANCHE AND dv/dt RATED IRF460500V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF460 500V 0.27 21The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design ach

..2. irf460.pdf Size:230K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive Requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamp

0.1. irf460b irf460c.pdf Size:413K _nell

RoHS IRF460 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET20A, 500VoltsDESCRIPTIOND The Nell IRF460 is a three-terminal silicon devicewith current conduction capability of 20A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 500V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

0.2. irf460-f2f.pdf Size:271K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive RequirementsEase of ParallelingAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamplifiers and high energy pulse circuits.ABSOLUTE MAXIMUM RATINGS

0.3. irf460-f2.pdf Size:256K _inchange_semiconductor